0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths

X. Zhang; A. L. Gutierrez-Aitken; D. Klotzkin; P. Bhattacharya; C. Caneau; R. Bhat

doi:10.1049/el:19961156

0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths

X. Zhang
, A. L. Gutierrez-Aitken
, D. Klotzkin
, P. Bhattacharya
, C. Caneau
, R. Bhat

Electrical and Computer Eng

Binghamton University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200μm long singlemode ridge lasers are characterised by Ith - 3mA, f_-3dB = 45GHz,F_-3dB (measured) = 43GHz,* and_-3dB-84GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76GHz, respectively.

Original language	English
Pages (from-to)	1715-1717
Number of pages	3
Journal	Electronics Letters
Volume	32
Issue number	18
DOIs	https://doi.org/10.1049/el:19961156
State	Published - 1996

Keywords

Semiconductor junction lasers
Semiconductor quantum wells

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10.1049/el:19961156

Cite this

@article{9254699a3a324b37b096c349ad3b7ea7,

title = "0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths",

abstract = "GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200μm long singlemode ridge lasers are characterised by Ith - 3mA, f-3dB = 45GHz,F-3dB (measured) = 43GHz,* and-3dB-84GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76GHz, respectively.",

keywords = "Semiconductor junction lasers, Semiconductor quantum wells",

author = "X. Zhang and Gutierrez-Aitken, \{A. L.\} and D. Klotzkin and P. Bhattacharya and C. Caneau and R. Bhat",

year = "1996",

doi = "10.1049/el:19961156",

language = "English",

volume = "32",

pages = "1715--1717",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "18",

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TY - JOUR

T1 - 0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths

AU - Zhang, X.

AU - Gutierrez-Aitken, A. L.

AU - Klotzkin, D.

AU - Bhattacharya, P.

AU - Caneau, C.

AU - Bhat, R.

PY - 1996

Y1 - 1996

N2 - GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200μm long singlemode ridge lasers are characterised by Ith - 3mA, f-3dB = 45GHz,F-3dB (measured) = 43GHz,* and-3dB-84GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76GHz, respectively.

AB - GaAs-based 0.98 μm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200μm long singlemode ridge lasers are characterised by Ith - 3mA, f-3dB = 45GHz,F-3dB (measured) = 43GHz,* and-3dB-84GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76GHz, respectively.

KW - Semiconductor junction lasers

KW - Semiconductor quantum wells

UR - https://www.scopus.com/pages/publications/0030217387

U2 - 10.1049/el:19961156

DO - 10.1049/el:19961156

M3 - Article

SN - 0013-5194

VL - 32

SP - 1715

EP - 1717

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

0.98 μm multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths

Abstract

Keywords

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