@inproceedings{e5f7c4bdcd584768b4613976c04a1a12,
title = "150 mm 4H-SiC substrate with low defect density",
abstract = "150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was carried out to investigate the distribution of defects in axial slices cut from the boule. It was found that an increase of dislocations and micropipes was mainly induced by inclusions. After eliminating these inclusions, which were formed in the mid to late stage of the crystal growth, both the screw dislocation density and base plane dislocation density could be decreased down to a magnitude of 102cm-2, which is comparable to that of high quality 100 mm diameter SiC substrates.",
keywords = "150mm diameter, 4H-SiC, Dislocation",
author = "Gao, \{Yu Qiang\} and Zhang, \{Hong Yan\} and Zong, \{Yan Min\} and Wang, \{Huan Huan\} and Guo, \{Jian Qiu\} and Balaji Raghothamachar and Michael Dudley and Wang, \{Xi Jie\}",
note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 ; Conference date: 04-10-2015 Through 09-10-2015",
year = "2016",
doi = "10.4028/www.scientific.net/MSF.858.41",
language = "English",
isbn = "9783035710427",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "41--44",
editor = "Fabrizio Roccaforte and Filippo Giannazzo and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Mario Saggio",
booktitle = "Silicon Carbide and Related Materials 2015",
}