@inproceedings{e6b7bcedbc49404eac676c47f137f871,
title = "3.2 μm single spatial mode diode lasers operating at room temperature",
abstract = "Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40°C with 1 mW of power at wavelengths above 3.2μm.",
author = "A. Soibel and C. Frez and A. Ksendzov and Y. Qiu and S. Forouhar and J. Chen and T. Hosoda and G. Kipshidze and L. Shterengas and G. Tsvid and G. Belenky",
year = "2010",
language = "English",
isbn = "9781557528902",
series = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010",
booktitle = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference",
note = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",
}