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3.2 μm single spatial mode diode lasers operating at room temperature

  • A. Soibel
  • , C. Frez
  • , A. Ksendzov
  • , Y. Qiu
  • , S. Forouhar
  • , J. Chen
  • , T. Hosoda
  • , G. Kipshidze
  • , L. Shterengas
  • , G. Tsvid
  • , G. Belenky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40°C with 1 mW of power at wavelengths above 3.2μm.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Conference

ConferenceLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Country/TerritoryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

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