@inproceedings{88337b85a6d84d34bdbe0bcf7fae34fa,
title = "3.2 μm single spatial mode diode lasers operating at room temperature",
abstract = "Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40 0C with 1 mW of power at wavelengths above 3.2μm.",
author = "A. Soibel and C. Frez and A. Ksendzov and Y. Qiu and S. Forouhar and J. Chen and T. Hosoda and G. Kipshidze and L. Shterengas and G. Tsvid and G. Belenky",
year = "2010",
doi = "10.1364/cleo.2010.ctue3",
language = "English",
isbn = "9781557528896",
series = "Optics InfoBase Conference Papers",
publisher = "Optical Society of America (OSA)",
booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",
note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",
}