3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli; K. Helle; H. Sandaker; B. Stugu; M. Barbero; F. Hügging; M. Karagounis; V. Kostyukhin; H. Krüger; J. W. Tsung; N. Wermes; M. Capua; S. Fazio; A. Mastroberardino; G. Susinno; C. Gallrapp; B. Di Girolamo; D. Dobos; A. La Rosa; H. Pernegger; S. Roe; T. Slavicek; S. Pospisil; K. Jakobs; M. Köhler; U. Parzefall; G. Darbo; G. Gariano; C. Gemme; A. Rovani; E. Ruscino; C. Butter; R. Bates; V. Oshea; S. Parker; M. Cavalli-Sforza; S. Grinstein; I. Korokolov; C. Pradilla; K. Einsweiler; M. Garcia-Sciveres; M. Borri; C. Da Vià; J. Freestone; S. Kolya; C. H. Lai; C. Nellist; J. Pater; R. Thompson; S. J. Watts; M. Hoeferkamp; S. Seidel; E. Bolle; H. Gjersdal; K. N. Sjoebaek; S. Stapnes; O. Rohne; D. Su; C. Young; P. Hansson; P. Grenier; J. Hasi; C. Kenney; M. Kocian; P. Jackson; D. Silverstein; H. Davetak; B. Dewilde; D. Tsybychev; G. F. Dalla Betta; P. Gabos; M. Povoli; M. Cobal; M. P. Giordani; L. Selmi; A. Cristofoli; D. Esseni; P. Palestri; C. Fleta; M. Lozano; G. Pellegrini; M. Boscardin; A. Bagolini; C. Piemonte; S. Ronchin; N. Zorzi; T. E. Hansen; T. Hansen; A. Kok; N. Lietaer; J. Kalliopuska; A. Oja

doi:10.1016/j.nima.2010.12.209

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

A. Micelli
, K. Helle
, H. Sandaker
, B. Stugu
, M. Barbero
, F. Hügging
, M. Karagounis
, V. Kostyukhin
, H. Krüger
, J. W. Tsung
, N. Wermes
, M. Capua
, S. Fazio
, A. Mastroberardino
, G. Susinno
, C. Gallrapp
, B. Di Girolamo
, D. Dobos
, A. La Rosa
, H. Pernegger

S. Roe, T. Slavicek, S. Pospisil, K. Jakobs, M. Köhler, U. Parzefall, G. Darbo, G. Gariano, C. Gemme, A. Rovani, E. Ruscino, C. Butter, R. Bates, V. Oshea, S. Parker, M. Cavalli-Sforza, S. Grinstein, I. Korokolov, C. Pradilla, K. Einsweiler, M. Garcia-Sciveres, M. Borri, C. Da Vià, J. Freestone, S. Kolya, C. H. Lai, C. Nellist, J. Pater, R. Thompson, S. J. Watts, M. Hoeferkamp, S. Seidel, E. Bolle, H. Gjersdal, K. N. Sjoebaek, S. Stapnes, O. Rohne, D. Su, C. Young, P. Hansson, P. Grenier, J. Hasi, C. Kenney, M. Kocian, P. Jackson, D. Silverstein, H. Davetak, B. Dewilde, D. Tsybychev, G. F. Dalla Betta, P. Gabos, M. Povoli, M. Cobal, M. P. Giordani, L. Selmi, A. Cristofoli, D. Esseni, P. Palestri, C. Fleta, M. Lozano, G. Pellegrini, M. Boscardin, A. Bagolini, C. Piemonte, S. Ronchin, N. Zorzi, T. E. Hansen, T. Hansen, A. Kok, N. Lietaer, J. Kalliopuska, A. Oja

Physics and Astronomy

Stony Brook University

University of Udine
University of Bergen
University of Bonn
University of Calabria
CERN
Czech Technical University in Prague
University of Freiburg
National Research Council of Italy
University of Glasgow
University of Hawai'i at Mānoa
Institute for High Energy Physics
Lawrence Berkeley National Laboratory
University of Manchester
University of New Mexico
University of Oslo
SLAC National Accelerator Laboratory
Stony Brook University
University of Trento
Centro Nacional de Microelectrónica (IMB-CNM-CSIC)
FBK-Trento
SINTEF
VTT Technical Research Centre of Finland Ltd.

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro- Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

Original language	English
Pages (from-to)	150-157
Number of pages	8
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	650
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2010.12.209
State	Published - Sep 11 2011

Keywords

3D sensors
ATLAS upgrade
HL-LHC
Radiation detectors
Silicon sensors

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10.1016/j.nima.2010.12.209

Cite this

Micelli, A., Helle, K., Sandaker, H., Stugu, B., Barbero, M., Hügging, F., Karagounis, M., Kostyukhin, V., Krüger, H., Tsung, J. W., Wermes, N., Capua, M., Fazio, S., Mastroberardino, A., Susinno, G., Gallrapp, C., Di Girolamo, B., Dobos, D., La Rosa, A., ... Oja, A. (2011). 3D-FBK pixel sensors: Recent beam tests results with irradiated devices. Nuclear Inst. and Methods in Physics Research, A, 650(1), 150-157. https://doi.org/10.1016/j.nima.2010.12.209

@article{a476834c824d421ea543da7c3f78a3e2,

title = "3D-FBK pixel sensors: Recent beam tests results with irradiated devices",

abstract = "The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro- Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.",

keywords = "3D sensors, ATLAS upgrade, HL-LHC, Radiation detectors, Silicon sensors",

author = "A. Micelli and K. Helle and H. Sandaker and B. Stugu and M. Barbero and F. H{\"u}gging and M. Karagounis and V. Kostyukhin and H. Kr{\"u}ger and Tsung, \{J. W.\} and N. Wermes and M. Capua and S. Fazio and A. Mastroberardino and G. Susinno and C. Gallrapp and \{Di Girolamo\}, B. and D. Dobos and \{La Rosa\}, A. and H. Pernegger and S. Roe and T. Slavicek and S. Pospisil and K. Jakobs and M. K{\"o}hler and U. Parzefall and G. Darbo and G. Gariano and C. Gemme and A. Rovani and E. Ruscino and C. Butter and R. Bates and V. Oshea and S. Parker and M. Cavalli-Sforza and S. Grinstein and I. Korokolov and C. Pradilla and K. Einsweiler and M. Garcia-Sciveres and M. Borri and \{Da Vi{\`a}\}, C. and J. Freestone and S. Kolya and Lai, \{C. H.\} and C. Nellist and J. Pater and R. Thompson and Watts, \{S. J.\} and M. Hoeferkamp and S. Seidel and E. Bolle and H. Gjersdal and Sjoebaek, \{K. N.\} and S. Stapnes and O. Rohne and D. Su and C. Young and P. Hansson and P. Grenier and J. Hasi and C. Kenney and M. Kocian and P. Jackson and D. Silverstein and H. Davetak and B. Dewilde and D. Tsybychev and \{Dalla Betta\}, \{G. F.\} and P. Gabos and M. Povoli and M. Cobal and Giordani, \{M. P.\} and L. Selmi and A. Cristofoli and D. Esseni and P. Palestri and C. Fleta and M. Lozano and G. Pellegrini and M. Boscardin and A. Bagolini and C. Piemonte and S. Ronchin and N. Zorzi and Hansen, \{T. E.\} and T. Hansen and A. Kok and N. Lietaer and J. Kalliopuska and A. Oja",

year = "2011",

month = sep,

day = "11",

doi = "10.1016/j.nima.2010.12.209",

language = "English",

volume = "650",

pages = "150--157",

journal = "Nuclear Inst. and Methods in Physics Research, A",

issn = "0168-9002",

number = "1",

}

Micelli, A, Helle, K, Sandaker, H, Stugu, B, Barbero, M, Hügging, F, Karagounis, M, Kostyukhin, V, Krüger, H, Tsung, JW, Wermes, N, Capua, M, Fazio, S, Mastroberardino, A, Susinno, G, Gallrapp, C, Di Girolamo, B, Dobos, D, La Rosa, A, Pernegger, H, Roe, S, Slavicek, T, Pospisil, S, Jakobs, K, Köhler, M, Parzefall, U, Darbo, G, Gariano, G, Gemme, C, Rovani, A, Ruscino, E, Butter, C, Bates, R, Oshea, V, Parker, S, Cavalli-Sforza, M, Grinstein, S, Korokolov, I, Pradilla, C, Einsweiler, K, Garcia-Sciveres, M, Borri, M, Da Vià, C, Freestone, J, Kolya, S, Lai, CH, Nellist, C, Pater, J, Thompson, R, Watts, SJ, Hoeferkamp, M, Seidel, S, Bolle, E, Gjersdal, H, Sjoebaek, KN, Stapnes, S, Rohne, O, Su, D, Young, C, Hansson, P, Grenier, P, Hasi, J, Kenney, C, Kocian, M, Jackson, P, Silverstein, D, Davetak, H, Dewilde, B, Tsybychev, D, Dalla Betta, GF, Gabos, P, Povoli, M, Cobal, M, Giordani, MP, Selmi, L, Cristofoli, A, Esseni, D, Palestri, P, Fleta, C, Lozano, M, Pellegrini, G, Boscardin, M, Bagolini, A, Piemonte, C, Ronchin, S, Zorzi, N, Hansen, TE, Hansen, T, Kok, A, Lietaer, N, Kalliopuska, J & Oja, A 2011, '3D-FBK pixel sensors: Recent beam tests results with irradiated devices', Nuclear Inst. and Methods in Physics Research, A, vol. 650, no. 1, pp. 150-157. https://doi.org/10.1016/j.nima.2010.12.209

TY - JOUR

T1 - 3D-FBK pixel sensors

T2 - Recent beam tests results with irradiated devices

AU - Micelli, A.

AU - Helle, K.

AU - Sandaker, H.

AU - Stugu, B.

AU - Barbero, M.

AU - Hügging, F.

AU - Karagounis, M.

AU - Kostyukhin, V.

AU - Krüger, H.

AU - Tsung, J. W.

AU - Wermes, N.

AU - Capua, M.

AU - Fazio, S.

AU - Mastroberardino, A.

AU - Susinno, G.

AU - Gallrapp, C.

AU - Di Girolamo, B.

AU - Dobos, D.

AU - La Rosa, A.

AU - Pernegger, H.

AU - Roe, S.

AU - Slavicek, T.

AU - Pospisil, S.

AU - Jakobs, K.

AU - Köhler, M.

AU - Parzefall, U.

AU - Darbo, G.

AU - Gariano, G.

AU - Gemme, C.

AU - Rovani, A.

AU - Ruscino, E.

AU - Butter, C.

AU - Bates, R.

AU - Oshea, V.

AU - Parker, S.

AU - Cavalli-Sforza, M.

AU - Grinstein, S.

AU - Korokolov, I.

AU - Pradilla, C.

AU - Einsweiler, K.

AU - Garcia-Sciveres, M.

AU - Borri, M.

AU - Da Vià, C.

AU - Freestone, J.

AU - Kolya, S.

AU - Lai, C. H.

AU - Nellist, C.

AU - Pater, J.

AU - Thompson, R.

AU - Watts, S. J.

AU - Hoeferkamp, M.

AU - Seidel, S.

AU - Bolle, E.

AU - Gjersdal, H.

AU - Sjoebaek, K. N.

AU - Stapnes, S.

AU - Rohne, O.

AU - Su, D.

AU - Young, C.

AU - Hansson, P.

AU - Grenier, P.

AU - Hasi, J.

AU - Kenney, C.

AU - Kocian, M.

AU - Jackson, P.

AU - Silverstein, D.

AU - Davetak, H.

AU - Dewilde, B.

AU - Tsybychev, D.

AU - Dalla Betta, G. F.

AU - Gabos, P.

AU - Povoli, M.

AU - Cobal, M.

AU - Giordani, M. P.

AU - Selmi, L.

AU - Cristofoli, A.

AU - Esseni, D.

AU - Palestri, P.

AU - Fleta, C.

AU - Lozano, M.

AU - Pellegrini, G.

AU - Boscardin, M.

AU - Bagolini, A.

AU - Piemonte, C.

AU - Ronchin, S.

AU - Zorzi, N.

AU - Hansen, T. E.

AU - Hansen, T.

AU - Kok, A.

AU - Lietaer, N.

AU - Kalliopuska, J.

AU - Oja, A.

PY - 2011/9/11

Y1 - 2011/9/11

N2 - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro- Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

AB - The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro- Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.

KW - 3D sensors

KW - ATLAS upgrade

KW - HL-LHC

KW - Radiation detectors

KW - Silicon sensors

UR - https://www.scopus.com/pages/publications/80052262862

U2 - 10.1016/j.nima.2010.12.209

DO - 10.1016/j.nima.2010.12.209

M3 - Article

SN - 0168-9002

VL - 650

SP - 150

EP - 157

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1

ER -

3D-FBK pixel sensors: Recent beam tests results with irradiated devices

Abstract

Keywords

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