55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame; B. S. Meyerson; E. F. Crabbe; C. L. Stanis; J. M. Cotte; J. M.C. Stork; A. C. Megdanis; G. L. Patton; S. R. Stiffler; J. B. Johnson; J. C. Warnock; J. H. Comfort; J. Y.C. Sun

55 GHz polysilicon-emitter graded SiGe-base PNP transistors

D. L. Harame
, B. S. Meyerson
, E. F. Crabbe
, C. L. Stanis
, J. M. Cotte
, J. M.C. Stork
, A. C. Megdanis
, G. L. Patton
, S. R. Stiffler
, J. B. Johnson
, J. C. Warnock
, J. H. Comfort
, J. Y.C. Sun

NY Creates Research Foundation

NY Creates

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

Original language	English
Pages (from-to)	71-72
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - Dec 1991
Event	1991 Symposium on VLSI Technology - Oiso, Jpn Duration: May 28 1991 → May 30 1991

Cite this

@article{251e4d6f25bb468e82d8e8ba47655164,

title = "55 GHz polysilicon-emitter graded SiGe-base PNP transistors",

abstract = "SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.",

author = "Harame, \{D. L.\} and Meyerson, \{B. S.\} and Crabbe, \{E. F.\} and Stanis, \{C. L.\} and Cotte, \{J. M.\} and Stork, \{J. M.C.\} and Megdanis, \{A. C.\} and Patton, \{G. L.\} and Stiffler, \{S. R.\} and Johnson, \{J. B.\} and Warnock, \{J. C.\} and Comfort, \{J. H.\} and Sun, \{J. Y.C.\}",

year = "1991",

month = dec,

language = "English",

pages = "71--72",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1991 Symposium on VLSI Technology ; Conference date: 28-05-1991 Through 30-05-1991",

}

TY - JOUR

T1 - 55 GHz polysilicon-emitter graded SiGe-base PNP transistors

AU - Harame, D. L.

AU - Meyerson, B. S.

AU - Crabbe, E. F.

AU - Stanis, C. L.

AU - Cotte, J. M.

AU - Stork, J. M.C.

AU - Megdanis, A. C.

AU - Patton, G. L.

AU - Stiffler, S. R.

AU - Johnson, J. B.

AU - Warnock, J. C.

AU - Comfort, J. H.

AU - Sun, J. Y.C.

PY - 1991/12

Y1 - 1991/12

N2 - SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

AB - SiGe-base PNP transistors with dramatically reduced valence band barrier effects on the DC and AC characteristics were fabricated with an N-type ultra high vacuum/chemical vapor deposition (UHV/CVD) epitaxial base in a polysilicon emitter technology. The transistors have ideal Gummel characteristics, high current gain, and cutoff frequencies of 50 to 55 GHz. These results demonstrate that SiGe-base PNP transistors are superior to Si-base or III-V PNP devices and comparable to the fastest Si-base NPN transistors. Despite their high Ge-content, the strained bases remain stable after a 950°C furnace anneal or a 975°C rapid thermal processing (RTP) anneal.

UR - https://www.scopus.com/pages/publications/0026393174

M3 - Conference article

SN - 0743-1562

SP - 71

EP - 72

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - 1991 Symposium on VLSI Technology

Y2 - 28 May 1991 through 30 May 1991

ER -

55 GHz polysilicon-emitter graded SiGe-base PNP transistors

Abstract

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