90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

J. Hoffman; J. R. Gosse; S. Shopov; S. P. Voinigescu; J. J. Pekarik; R. Camillo-Castillo; V. Jain; D. Harame

doi:10.1109/BCTM.2015.7340568

90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

J. Hoffman
, J. R. Gosse
, S. Shopov
, S. P. Voinigescu
, J. J. Pekarik
, R. Camillo-Castillo
, V. Jain
, D. Harame

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

An 80GHz bandwidth distributed amplifier with 7V_pp differential output swing and P_O1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.

Original language	English
Title of host publication	2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	157-160
Number of pages	4
ISBN (Electronic)	9781467385510
DOIs	https://doi.org/10.1109/BCTM.2015.7340568
State	Published - Nov 30 2015
Event	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015 - Boston, United States Duration: Oct 26 2015 → Oct 28 2015

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Volume	2015-November

Conference

Conference	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015
Country/Territory	United States
City	Boston
Period	10/26/15 → 10/28/15

Keywords

FET-HBT cascode
PIN diode
SiGe BiCMOS
bandpass filter
distributed amplifier
fiberoptic transmitters
instrumentation amplifier
linear broadband amplifier
modulator driver
switch

Access to Document

10.1109/BCTM.2015.7340568

Cite this

Hoffman, J., Gosse, J. R., Shopov, S., Voinigescu, S. P., Pekarik, J. J., Camillo-Castillo, R., Jain, V., & Harame, D. (2015). 90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters. In 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015 (pp. 157-160). Article 7340568 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 2015-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCTM.2015.7340568

@inproceedings{a012a344d1f043a680ffaff7da26faf3,

title = "90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters",

abstract = "An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.",

keywords = "FET-HBT cascode, PIN diode, SiGe BiCMOS, bandpass filter, distributed amplifier, fiberoptic transmitters, instrumentation amplifier, linear broadband amplifier, modulator driver, switch",

author = "J. Hoffman and Gosse, \{J. R.\} and S. Shopov and Voinigescu, \{S. P.\} and Pekarik, \{J. J.\} and R. Camillo-Castillo and V. Jain and D. Harame",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015 ; Conference date: 26-10-2015 Through 28-10-2015",

year = "2015",

month = nov,

day = "30",

doi = "10.1109/BCTM.2015.7340568",

language = "English",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "157--160",

booktitle = "2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015",

}

Hoffman, J, Gosse, JR, Shopov, S, Voinigescu, SP, Pekarik, JJ, Camillo-Castillo, R, Jain, V & Harame, D 2015, 90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters. in 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015., 7340568, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, vol. 2015-November, Institute of Electrical and Electronics Engineers Inc., pp. 157-160, IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015, Boston, United States, 10/26/15. https://doi.org/10.1109/BCTM.2015.7340568

90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters. / Hoffman, J.; Gosse, J. R.; Shopov, S. et al.
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 157-160 7340568 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting; Vol. 2015-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

AU - Hoffman, J.

AU - Gosse, J. R.

AU - Shopov, S.

AU - Voinigescu, S. P.

AU - Pekarik, J. J.

AU - Camillo-Castillo, R.

AU - Jain, V.

AU - Harame, D.

PY - 2015/11/30

Y1 - 2015/11/30

N2 - An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.

AB - An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40-100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter or receiver front ends in next generation instrumentation and 100GBaud fiberoptic systems.

KW - FET-HBT cascode

KW - PIN diode

KW - SiGe BiCMOS

KW - bandpass filter

KW - distributed amplifier

KW - fiberoptic transmitters

KW - instrumentation amplifier

KW - linear broadband amplifier

KW - modulator driver

KW - switch

UR - https://www.scopus.com/pages/publications/84957872610

U2 - 10.1109/BCTM.2015.7340568

DO - 10.1109/BCTM.2015.7340568

M3 - Conference contribution

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 157

EP - 160

BT - 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015

Y2 - 26 October 2015 through 28 October 2015

ER -

Hoffman J, Gosse JR, Shopov S, Voinigescu SP, Pekarik JJ, Camillo-Castillo R et al. 90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters. In 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 157-160. 7340568. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BCTM.2015.7340568

90nm SiGe BiCMOS analog front-end circuits for 80GHz bandwidth large-swing transmitters

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Keywords

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