Abstract
We present a novel CMOS current-mode imager that uses nonvolatile floating gate charge storage in the pixel for automatic cancellation of fixed-pattern noise (FPN). We demonstrate the ability to reduce the variance of the initial FPN over a range of incident light intensities. Each pixel incorporates a unique circuit that uses pFET hot-electron injection to adapt out the FPN for each pixel in parallel. The design has been fabricated in a commercially available 0.5μm process. Experimental results confirm the ability to reduce the FPN variance by a factor of 98.23 at the intensity at which adaptation was performed, and by a factor of 9.22 over 5 orders of magnitude of intensity. The adaptation takes ̃ 6 minutes and the 128 × 128 image can be read at 7 frames/sec. The chip consumes 43.3mW.
| Original language | English |
|---|---|
| Article number | 1465835 |
| Pages (from-to) | 5314-5317 |
| Number of pages | 4 |
| Journal | Proceedings - IEEE International Symposium on Circuits and Systems |
| DOIs | |
| State | Published - 2005 |
| Event | IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: May 23 2005 → May 26 2005 |
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