A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles

Feilong Zhang; Cheng Li; Chenkun Wang; Mengfu Di; Zijin Pan; David Harame; Albert Wang

doi:10.1109/S3S46989.2019.9320736

A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles

Feilong Zhang
, Cheng Li
, Chenkun Wang
, Mengfu Di
, Zijin Pan
, David Harame
, Albert Wang

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measurements show compatible switch performance compared to similar millimeter-wave switches of various topologies in HEMT and bulk CMOS technologies. The SPDT switches feature full-chip 9KV ESD protection confirmed by measurement. It reveals that ESD-induced parasitic effects may have substantial impacts on mm-wave broadband switches, which hence requires careful ESD-RFIC co-design for 5G RF ICs in above-6GHz bands.

Original language	English
Title of host publication	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728135236
DOIs	https://doi.org/10.1109/S3S46989.2019.9320736
State	Published - Oct 14 2019
Event	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 - San Jose, United States Duration: Oct 14 2019 → Oct 17 2019

Publication series

Name	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

Conference

Conference	2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
Country/Territory	United States
City	San Jose
Period	10/14/19 → 10/17/19

Keywords

5G
ESD
SOI
SPDT
switch
travelling wave

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10.1109/S3S46989.2019.9320736

Cite this

Zhang, F., Li, C., Wang, C., Di, M., Pan, Z., Harame, D., & Wang, A. (2019). A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles. In 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 Article 9320736 (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/S3S46989.2019.9320736

Zhang, Feilong ; Li, Cheng ; Wang, Chenkun et al. / A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles. 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019).

@inproceedings{a3e60c948ea84b57850354655458284d,

title = "A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles",

abstract = "This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measurements show compatible switch performance compared to similar millimeter-wave switches of various topologies in HEMT and bulk CMOS technologies. The SPDT switches feature full-chip 9KV ESD protection confirmed by measurement. It reveals that ESD-induced parasitic effects may have substantial impacts on mm-wave broadband switches, which hence requires careful ESD-RFIC co-design for 5G RF ICs in above-6GHz bands.",

keywords = "5G, ESD, SOI, SPDT, switch, travelling wave",

author = "Feilong Zhang and Cheng Li and Chenkun Wang and Mengfu Di and Zijin Pan and David Harame and Albert Wang",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 ; Conference date: 14-10-2019 Through 17-10-2019",

year = "2019",

month = oct,

day = "14",

doi = "10.1109/S3S46989.2019.9320736",

language = "English",

series = "2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019",

}

Zhang, F, Li, C, Wang, C, Di, M, Pan, Z, Harame, D & Wang, A 2019, A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles. in 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019., 9320736, 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019, San Jose, United States, 10/14/19. https://doi.org/10.1109/S3S46989.2019.9320736

A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles. / Zhang, Feilong; Li, Cheng; Wang, Chenkun et al.
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9320736 (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles

AU - Zhang, Feilong

AU - Li, Cheng

AU - Wang, Chenkun

AU - Di, Mengfu

AU - Pan, Zijin

AU - Harame, David

AU - Wang, Albert

PY - 2019/10/14

Y1 - 2019/10/14

N2 - This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measurements show compatible switch performance compared to similar millimeter-wave switches of various topologies in HEMT and bulk CMOS technologies. The SPDT switches feature full-chip 9KV ESD protection confirmed by measurement. It reveals that ESD-induced parasitic effects may have substantial impacts on mm-wave broadband switches, which hence requires careful ESD-RFIC co-design for 5G RF ICs in above-6GHz bands.

AB - This paper reports a 28GHz broadband single-pole double-throw (SPDT) travelling wave switch designed in a 22nm fully-depleted silicon-on-insulator (FD-SOI) technology. The 28GHz SPDT TRx switch covers the n257 and n258 bands of 5G systems. Measurements show compatible switch performance compared to similar millimeter-wave switches of various topologies in HEMT and bulk CMOS technologies. The SPDT switches feature full-chip 9KV ESD protection confirmed by measurement. It reveals that ESD-induced parasitic effects may have substantial impacts on mm-wave broadband switches, which hence requires careful ESD-RFIC co-design for 5G RF ICs in above-6GHz bands.

KW - 5G

KW - ESD

KW - SOI

KW - SPDT

KW - switch

KW - travelling wave

UR - https://www.scopus.com/pages/publications/85089189711

U2 - 10.1109/S3S46989.2019.9320736

DO - 10.1109/S3S46989.2019.9320736

M3 - Conference contribution

T3 - 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

BT - 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

Y2 - 14 October 2019 through 17 October 2019

ER -

Zhang F, Li C, Wang C, Di M, Pan Z, Harame D et al. A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles. In 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9320736. (2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019). doi: 10.1109/S3S46989.2019.9320736

A 28GHz SPDT TRx Switch with 9KV ESD Protection in 22nm SOI CMOS for 5G Mobiles

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Keywords

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