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A 55nm, 0.4V 5526-TOPS/W Compute-in-Memory Binarized CNN Accelerator for AIoT Applications

  • Hongtu Zhang
  • , Yuhao Shu
  • , Weixiong Jiang
  • , Zihan Yin
  • , Wenfeng Zhao
  • , Yajun Ha
  • ShanghaiTech University

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Binarized convolutional neural network (BCNN) is a promising and efficient technique toward the landscape of Artificial Intelligence of Things (AIoT) applications. In-Memory Computing (IMC) has widely been studied to accelerate the inference task of BCNN to maximize both throughput and energy efficiency. However, existing IMC circuits and architectures are only optimized for a fixed kernel size and nominal voltage operation, which poses practical limitations on optimal network architecture exploration and additional energy efficiency benefits. In this brief, we present a reconfigurable, near-threshold IMC-based BCNN accelerator design. The IMC-based accelerator architecture is scalable for different kernels sizes ( 3 times 3 times d and 5 times 5 times d ) and achieves high resource utilization for both cases. Moreover, the IMC bitcell is optimized for reliable near-threshold operation. Implemented in a 55-nm CMOS process, our proposed reconfigurable IMC-based BCNN accelerator achieves 5526 TOPS/W energy efficiency at 0.4V, which is 6.38times higher compared to the state-of-the-art designs. The inference accuracies of our proposed design are 97.73%, 82.56%, and 92.61% across three datasets (MNIST, CIFAR-10, and SVHN), respectively.

Original languageEnglish
Article number9380398
Pages (from-to)1695-1699
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume68
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • Binary neural network
  • SNM
  • SRAM
  • energy efficiency
  • in-memory computing
  • near-threshold voltage

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