Abstract
In this paper, a lattice Boltzmann method (LBM)-based model is developed to simulate the subcontinuum behavior of multidimensional heat conduction in solids. Based on a previous study (Chen et al., 2014, "Sub-Continuum Thermal Modeling Using Diffusion in the Lattice Boltzmann Transport Equation," Int. J. Heat Mass Transfer, 79, pp. 666-675), phonon energy transport is separated to a ballistic part and a diffusive part, with phonon equilibrium assumed at boundaries. Steady-state temperature/total energy density solutions from continuum scales to ballistic scales are considered. A refined LBM-based numerical approach is applied to a two-dimensional simplified transistor model proposed by (Sinha et al. 2006, "Non-Equilibrium Phonon Distributions in Sub-100 nm Silicon Transistors," ASME J. Heat Transfer, 128(7), pp. 638-647), and the results are compared with the Fourier-based heat conduction model. The three-dimensional (3D) LBM model is also developed and verified at both the ballistic and continuous limits. The impact of film thickness on the cross-plane and in-plane thermal conductivities is analyzed, and a new model of the supplementary diffusion term is proposed. Predictions based on the finalized model are compared with the existing in-plane thermal conductivity measurements and cross-plane thermal conductivity molecular dynamics (MD) results.
| Original language | English |
|---|---|
| Article number | 041008 |
| Journal | Journal of Electronic Packaging |
| Volume | 138 |
| Issue number | 4 |
| DOIs | |
| State | Published - Dec 1 2016 |
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