A new edge termination technique for high-voltage devices in 4H-SiCMultiple-floating-zone junction termination extension

Woongje Sung; Edward Van Brunt; B. J. Baliga; Alex Q. Huang

doi:10.1109/LED.2011.2144561

A new edge termination technique for high-voltage devices in 4H-SiCMultiple-floating-zone junction termination extension

Woongje Sung
, Edward Van Brunt
, B. J. Baliga
, Alex Q. Huang

Nanoscale Science and Engineering

University at Albany

North Carolina State University

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.

Original language	English
Article number	5770178
Pages (from-to)	880-882
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	7
DOIs	https://doi.org/10.1109/LED.2011.2144561
State	Published - Jul 2011

Keywords

4H-SiC
Edge termination
PiN diode
junction termination extension (JTE)

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10.1109/LED.2011.2144561

Cite this

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abstract = "A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88\% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.",

keywords = "4H-SiC, Edge termination, PiN diode, junction termination extension (JTE)",

author = "Woongje Sung and \{Van Brunt\}, Edward and Baliga, \{B. J.\} and Huang, \{Alex Q.\}",

year = "2011",

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AU - Baliga, B. J.

AU - Huang, Alex Q.

PY - 2011/7

Y1 - 2011/7

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AB - A new edge termination method, referred to as multiple-floating-zone junction termination extension (MFZ-JTE), is presented for high-voltage devices in 4H-SiC. 4H-SiC PiN rectifiers with a breakdown voltage of 10 kV (about 88% of the theoretical value) were fabricated using MFZ-JTEs. The MFZ-JTE technique only requires a single pattern-and-implant step while providing significant process latitude for parameter variations such as implantation dose and activation anneal condition.

KW - 4H-SiC

KW - Edge termination

KW - PiN diode

KW - junction termination extension (JTE)

UR - https://www.scopus.com/pages/publications/79959792148

U2 - 10.1109/LED.2011.2144561

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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M1 - 5770178

ER -

A new edge termination technique for high-voltage devices in 4H-SiCMultiple-floating-zone junction termination extension

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Keywords

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