A scaleable, statistical SPICE Gummel-Poon model for SiGe HBT's

K. M. Walter; B. Ebersman; D. A. Sunderland; G. D. Berg; G. G. Freeman; R. A. Groves; D. K. Jadus; D. L. Harame

doi:10.1109/4.711345

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBT's

K. M. Walter
, B. Ebersman
, D. A. Sunderland
, G. D. Berg
, G. G. Freeman
, R. A. Groves
, D. K. Jadus
, D. L. Harame

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Abstract

A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBT's), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE. DC and ac fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.

Original language	English
Pages (from-to)	1439-1443
Number of pages	5
Journal	IEEE Journal of Solid-State Circuits
Volume	33
Issue number	9
DOIs	https://doi.org/10.1109/4.711345
State	Published - Sep 1998

Keywords

Bipolar transistors
Gaussian distribution
Semiconductor device modeling
Silicon compounds
Statistics

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10.1109/4.711345

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title = "A scaleable, statistical SPICE Gummel-Poon model for SiGe HBT's",

abstract = "A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBT's), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE. DC and ac fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.",

keywords = "Bipolar transistors, Gaussian distribution, Semiconductor device modeling, Silicon compounds, Statistics",

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year = "1998",

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language = "English",

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AU - Walter, K. M.

AU - Ebersman, B.

AU - Sunderland, D. A.

AU - Berg, G. D.

AU - Freeman, G. G.

AU - Groves, R. A.

AU - Jadus, D. K.

AU - Harame, D. L.

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AB - A scaleable, statistical model has been developed for silicon germanium heterojunction transistors (SiGe HBT's), which are components of a commercially available BiCMOS technology for high-frequency applications. The SPICE Gummel-Poon (SGP) model parameters are scaled, and statistics added, using language features built into HSPICE. DC and ac fit is good over a wide range in emitter sizes, allowing an open-ended set of devices to be used with valid modeling capabilities. Features of IBM's HBT technology that contribute to the scaleability of the technology are discussed.

KW - Bipolar transistors

KW - Gaussian distribution

KW - Semiconductor device modeling

KW - Silicon compounds

KW - Statistics

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JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 9

ER -

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBT's

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Keywords

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