A Si-Ge HBT technology for the wireless marketplace

D. C. Ahlgren; D. A. Sunderland; M. M. Gilbert; D. R. Greenberg; S. J. Jeng; J. C. Malinowski; D. Nguyen-Ngoc; K. J. Stein; D. L. Harame; B. Meyerson

A Si-Ge HBT technology for the wireless marketplace

D. C. Ahlgren
, D. A. Sunderland
, M. M. Gilbert
, D. R. Greenberg
, S. J. Jeng
, J. C. Malinowski
, D. Nguyen-Ngoc
, K. J. Stein
, D. L. Harame
, B. Meyerson

NY Creates Research Foundation

NY Creates

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

This review presents the fundamentals of IBM's epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.

Original language	English
Title of host publication	ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
Editors	Massimo Rudan, Giorgio Baccarani
Publisher	IEEE Computer Society
Pages	453-460
Number of pages	8
ISBN (Electronic)	286332196X
ISBN (Print)	9782863321966
State	Published - 1996
Event	26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy Duration: Sep 9 1996 → Sep 11 1996

Publication series

Name	European Solid-State Device Research Conference

Conference

Conference	26th European Solid State Device Research Conference, ESSDERC 1996
Country/Territory	Italy
City	Bologna
Period	09/9/96 → 09/11/96

Cite this

Ahlgren, D. C., Sunderland, D. A., Gilbert, M. M., Greenberg, D. R., Jeng, S. J., Malinowski, J. C., Nguyen-Ngoc, D., Stein, K. J., Harame, D. L., & Meyerson, B. (1996). A Si-Ge HBT technology for the wireless marketplace. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 453-460). Article 5436192 (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{73f47e3e93fb4ca08904b0542d6231a6,

title = "A Si-Ge HBT technology for the wireless marketplace",

abstract = "This review presents the fundamentals of IBM's epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.",

author = "Ahlgren, \{D. C.\} and Sunderland, \{D. A.\} and Gilbert, \{M. M.\} and Greenberg, \{D. R.\} and Jeng, \{S. J.\} and Malinowski, \{J. C.\} and D. Nguyen-Ngoc and Stein, \{K. J.\} and Harame, \{D. L.\} and B. Meyerson",

note = "Publisher Copyright: {\textcopyright} 1996 Editions Frontieres.; 26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",

year = "1996",

language = "English",

isbn = "9782863321966",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "453--460",

editor = "Massimo Rudan and Giorgio Baccarani",

booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",

}

Ahlgren, DC, Sunderland, DA, Gilbert, MM, Greenberg, DR, Jeng, SJ, Malinowski, JC, Nguyen-Ngoc, D, Stein, KJ, Harame, DL & Meyerson, B 1996, A Si-Ge HBT technology for the wireless marketplace. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5436192, European Solid-State Device Research Conference, IEEE Computer Society, pp. 453-460, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 09/9/96.

A Si-Ge HBT technology for the wireless marketplace. / Ahlgren, D. C.; Sunderland, D. A.; Gilbert, M. M. et al.
ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. IEEE Computer Society, 1996. p. 453-460 5436192 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Si-Ge HBT technology for the wireless marketplace

AU - Ahlgren, D. C.

AU - Sunderland, D. A.

AU - Gilbert, M. M.

AU - Greenberg, D. R.

AU - Jeng, S. J.

AU - Malinowski, J. C.

AU - Nguyen-Ngoc, D.

AU - Stein, K. J.

AU - Harame, D. L.

AU - Meyerson, B.

PY - 1996

Y1 - 1996

N2 - This review presents the fundamentals of IBM's epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.

AB - This review presents the fundamentals of IBM's epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon.

UR - https://www.scopus.com/pages/publications/0347398757

M3 - Conference contribution

SN - 9782863321966

T3 - European Solid-State Device Research Conference

SP - 453

EP - 460

BT - ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference

A2 - Rudan, Massimo

A2 - Baccarani, Giorgio

PB - IEEE Computer Society

T2 - 26th European Solid State Device Research Conference, ESSDERC 1996

Y2 - 9 September 1996 through 11 September 1996

ER -

A Si-Ge HBT technology for the wireless marketplace

Abstract

Publication series

Conference

Other files and links

Fingerprint

Cite this