Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

Qingqing Liang; Wei Min Kuo; John D. Cressler; Guofu Niu; Alvin J. Joseph; David L. Harame

Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

Qingqing Liang
, Wei Min Kuo
, John D. Cressler
, Guofu Niu
, Alvin J. Joseph
, David L. Harame

NY Creates Research Foundation

NY Creates

Georgia Institute of Technology
Auburn University
Global Foundries, Inc.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A new self-calibrated extraction technique for transistor characterization to 110 GHz is presented. This technique offers an on-wafer, four-port extraction approach which greatly improves the measurement accuracy at high frequencies (e.g., f > 30 GHz). In contrast to conventional parasitics-deembedding methodologies (i.e., "open-short"), the present technique requires no additional calibration (e.g., SOLT, LRRM, or TRL) before measurements. The proposed method is first simulated, and then applied to 110 GHz S-paramcter measurements of state-of-the-art SiGe HBTs to demonstrate its utility. The results both theoretically and experimentally show that the proposed method represents a robust, self-calibrated approach for obtaining better accuracy in mm-wave transistor characterization.

Original language	English
Title of host publication	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Editors	J.D. Cressler, J. Papapolymerou
Pages	282-285
Number of pages	4
State	Published - 2004
Event	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, GA, United States Duration: Sep 8 2004 → Sep 10 2004

Publication series

Name	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Conference

Conference	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Country/Territory	United States
City	Atlanta, GA
Period	09/8/04 → 09/10/04

Cite this

Liang, Q., Kuo, W. M., Cressler, J. D., Niu, G., Joseph, A. J., & Harame, D. L. (2004). Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 282-285). (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Liang, Qingqing ; Kuo, Wei Min ; Cressler, John D. et al. / Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. editor / J.D. Cressler ; J. Papapolymerou. 2004. pp. 282-285 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

@inproceedings{7432e65c2cd34df6b96f549bd8865df4,

title = "Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique",

abstract = "A new self-calibrated extraction technique for transistor characterization to 110 GHz is presented. This technique offers an on-wafer, four-port extraction approach which greatly improves the measurement accuracy at high frequencies (e.g., f > 30 GHz). In contrast to conventional parasitics-deembedding methodologies (i.e., {"}open-short{"}), the present technique requires no additional calibration (e.g., SOLT, LRRM, or TRL) before measurements. The proposed method is first simulated, and then applied to 110 GHz S-paramcter measurements of state-of-the-art SiGe HBTs to demonstrate its utility. The results both theoretically and experimentally show that the proposed method represents a robust, self-calibrated approach for obtaining better accuracy in mm-wave transistor characterization.",

author = "Qingqing Liang and Kuo, \{Wei Min\} and Cressler, \{John D.\} and Guofu Niu and Joseph, \{Alvin J.\} and Harame, \{David L.\}",

year = "2004",

language = "English",

isbn = "0780387031",

series = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers",

pages = "282--285",

editor = "J.D. Cressler and J. Papapolymerou",

booktitle = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems",

note = "2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers ; Conference date: 08-09-2004 Through 10-09-2004",

}

Liang, Q, Kuo, WM, Cressler, JD, Niu, G, Joseph, AJ & Harame, DL 2004, Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique. in JD Cressler & J Papapolymerou (eds), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, pp. 282-285, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, Atlanta, GA, United States, 09/8/04.

Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique. / Liang, Qingqing; Kuo, Wei Min; Cressler, John D. et al.
2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. ed. / J.D. Cressler; J. Papapolymerou. 2004. p. 282-285 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

AU - Liang, Qingqing

AU - Kuo, Wei Min

AU - Cressler, John D.

AU - Niu, Guofu

AU - Joseph, Alvin J.

AU - Harame, David L.

PY - 2004

Y1 - 2004

N2 - A new self-calibrated extraction technique for transistor characterization to 110 GHz is presented. This technique offers an on-wafer, four-port extraction approach which greatly improves the measurement accuracy at high frequencies (e.g., f > 30 GHz). In contrast to conventional parasitics-deembedding methodologies (i.e., "open-short"), the present technique requires no additional calibration (e.g., SOLT, LRRM, or TRL) before measurements. The proposed method is first simulated, and then applied to 110 GHz S-paramcter measurements of state-of-the-art SiGe HBTs to demonstrate its utility. The results both theoretically and experimentally show that the proposed method represents a robust, self-calibrated approach for obtaining better accuracy in mm-wave transistor characterization.

AB - A new self-calibrated extraction technique for transistor characterization to 110 GHz is presented. This technique offers an on-wafer, four-port extraction approach which greatly improves the measurement accuracy at high frequencies (e.g., f > 30 GHz). In contrast to conventional parasitics-deembedding methodologies (i.e., "open-short"), the present technique requires no additional calibration (e.g., SOLT, LRRM, or TRL) before measurements. The proposed method is first simulated, and then applied to 110 GHz S-paramcter measurements of state-of-the-art SiGe HBTs to demonstrate its utility. The results both theoretically and experimentally show that the proposed method represents a robust, self-calibrated approach for obtaining better accuracy in mm-wave transistor characterization.

UR - https://www.scopus.com/pages/publications/20344389075

M3 - Conference contribution

SN - 0780387031

T3 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

SP - 282

EP - 285

BT - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

A2 - Cressler, J.D.

A2 - Papapolymerou, J.

T2 - 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Y2 - 8 September 2004 through 10 September 2004

ER -

Liang Q, Kuo WM, Cressler JD, Niu G, Joseph AJ, Harame DL. Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique. In Cressler JD, Papapolymerou J, editors, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004. p. 282-285. (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Accurate ac transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique

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