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Advanced development techniques for metal-based EUV resists

  • Jodi Hotalen
  • , Michael Murphy
  • , William Earley
  • , Michaela Vockenhuber
  • , Yasin Ekinci
  • , Daniel A. Freedman
  • , Robert L. Brainard
  • SUNY Polytechnic Institute
  • Paul Scherrer Institute
  • SUNY New Paltz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

23 Scopus citations

Abstract

Pure thin-films of unimolecular organometallic photoresists were lithographically evaluated using extreme ultraviolet light (EUV, λ = 13.5 nm) and developed using solutions containing carboxylic acids. Optimization of development solutions used with a cobalt-oxalate EUV resist (NP1, 2) led to a switch in lithographic tone from negative to positive. Additional optimization led to an improvement in top loss (35 to 7%) with development in cyclohexanone and 2-butanone, respectively. We saw a drastic improvement in photo-speed (Emax = 5 mJ/cm2) and contrast of the negative-tone imaging with development in certain acidic solutions. Additionally, carboxylic acid solutions provide excellent development conditions for resists that we, in the past, have been unable to successfully develop.

Original languageEnglish
Title of host publicationExtreme Ultraviolet (EUV) Lithography VIII
EditorsKenneth A. Goldberg, Eric M. Panning
PublisherSPIE
ISBN (Electronic)9781510607378
DOIs
StatePublished - 2017
EventExtreme Ultraviolet (EUV) Lithography VIII 2017 - San Jose, United States
Duration: Feb 27 2017Mar 2 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10143

Conference

ConferenceExtreme Ultraviolet (EUV) Lithography VIII 2017
Country/TerritoryUnited States
CitySan Jose
Period02/27/1703/2/17

Keywords

  • cobalt
  • contrast
  • extreme ultraviolet
  • organometallic
  • oxalate
  • photoresist
  • positive-tone
  • resist

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