Advances in type-I GaSb based lasers

Gregory Belenky; Leon Shterengas; Dmitry Donetsky; Mikhail Kisin; Gela Kipshidze

doi:10.1143/JJAP.47.8236

Advances in type-I GaSb based lasers

Gregory Belenky
, Leon Shterengas
, Dmitry Donetsky
, Mikhail Kisin
, Gela Kipshidze

Electrical Engineering

Stony Brook University

Stony Brook University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuouswave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050mW at 2.4 μm and 85 mW at 3.1 μm.

Original language	English
Pages (from-to)	8236-8238
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	47
Issue number	10 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.8236
State	Published - Oct 17 2008

Keywords

Diode lasers
GaSb
High-power
Mid-infrared
Type-I

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10.1143/JJAP.47.8236

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abstract = "We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuouswave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050mW at 2.4 μm and 85 mW at 3.1 μm.",

keywords = "Diode lasers, GaSb, High-power, Mid-infrared, Type-I",

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AU - Belenky, Gregory

AU - Shterengas, Leon

AU - Donetsky, Dmitry

AU - Kisin, Mikhail

AU - Kipshidze, Gela

PY - 2008/10/17

Y1 - 2008/10/17

N2 - We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuouswave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050mW at 2.4 μm and 85 mW at 3.1 μm.

AB - We show that high level of compressive strain in the optically active quantum wells is a key condition for efficient continuouswave room-temperature operation of the type-I GaSb-based diode lasers. Lasers with two highly strained InGaAsSb quantum wells and AlGaAsSb barriers demonstrate an output CW power of 1050mW at 2.4 μm and 85 mW at 3.1 μm.

KW - Diode lasers

KW - GaSb

KW - High-power

KW - Mid-infrared

KW - Type-I

UR - https://www.scopus.com/pages/publications/55349138412

U2 - 10.1143/JJAP.47.8236

DO - 10.1143/JJAP.47.8236

M3 - Article

SN - 0021-4922

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SP - 8236

EP - 8238

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 PART 2

ER -

Advances in type-I GaSb based lasers

Abstract

Keywords

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