AlGaN based tunable hyperspectral detector

The application of III-nitrides to the development of a tunable hyperspectral detector is reported. The device consists of a triangular step barrier provided by a heterostructure of AlN Alx Ga1-x NGaN. The structure is carefully designed to avoid relaxation of strained layers to prevent further introduction of defects and cracking due to the large tensile strain between different layers of the device. This structure is envisioned for tunable detection of ultraviolet through infrared wavelengths. The particular device structure reported here is expected to span detection energies from ∼1 to 2 eV and from 3.4 to 5.4 eV. The adjustable height of the triangular barrier with applied bias voltage provides tunability of the detected wavelength. The results from a first generation device are reported.