Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures

B. Jagannathan; R. L. Wallace; W. A. Anderson; R. N. Ahrenkeil

Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures

B. Jagannathan
, R. L. Wallace
, W. A. Anderson
, R. N. Ahrenkeil

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silicon film growth (amorphous and microcrystalline) by double dilution of silane was studied in a microwave CVD system. The double dilution was achieved by using 2%SiH₄ mixtures (balance of Ar or He) further diluted in H₂. Low hydrogen content films deposited at low temperatures are demonstrated by the technique. The a-Si deposited using 2%SiH₄/He shows approximately 8% H₂ content and a compact nature. These films exhibit σ_D of 10^-8 S/cm and a σ_D/σ_PH to approximately 10^-4 μ c-Si films deposited on glass at temperatures of 300-450 °C, show high crystalline fraction and low dark conductivity (approximately 10^-6 S/cm). With SiH₄Ar, crystallinity could be initiated without H₂ addition. Increased grain sizes and decreased H₂ content were seen for increasing H₂ dilution.

Original language	English
Pages (from-to)	675-678
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: Sep 29 1997 → Oct 3 1997

Cite this

@article{97f71752b04a44b396f8f10e58ab06a2,

title = "Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures",

abstract = "Silicon film growth (amorphous and microcrystalline) by double dilution of silane was studied in a microwave CVD system. The double dilution was achieved by using 2\%SiH4 mixtures (balance of Ar or He) further diluted in H2. Low hydrogen content films deposited at low temperatures are demonstrated by the technique. The a-Si deposited using 2\%SiH4/He shows approximately 8\% H2 content and a compact nature. These films exhibit σD of 10-8 S/cm and a σD/σPH to approximately 10-4 μ c-Si films deposited on glass at temperatures of 300-450 °C, show high crystalline fraction and low dark conductivity (approximately 10-6 S/cm). With SiH4Ar, crystallinity could be initiated without H2 addition. Increased grain sizes and decreased H2 content were seen for increasing H2 dilution.",

author = "B. Jagannathan and Wallace, \{R. L.\} and Anderson, \{W. A.\} and Ahrenkeil, \{R. N.\}",

year = "1997",

language = "English",

pages = "675--678",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

}

TY - JOUR

T1 - Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures

AU - Jagannathan, B.

AU - Wallace, R. L.

AU - Anderson, W. A.

AU - Ahrenkeil, R. N.

PY - 1997

Y1 - 1997

N2 - Silicon film growth (amorphous and microcrystalline) by double dilution of silane was studied in a microwave CVD system. The double dilution was achieved by using 2%SiH4 mixtures (balance of Ar or He) further diluted in H2. Low hydrogen content films deposited at low temperatures are demonstrated by the technique. The a-Si deposited using 2%SiH4/He shows approximately 8% H2 content and a compact nature. These films exhibit σD of 10-8 S/cm and a σD/σPH to approximately 10-4 μ c-Si films deposited on glass at temperatures of 300-450 °C, show high crystalline fraction and low dark conductivity (approximately 10-6 S/cm). With SiH4Ar, crystallinity could be initiated without H2 addition. Increased grain sizes and decreased H2 content were seen for increasing H2 dilution.

AB - Silicon film growth (amorphous and microcrystalline) by double dilution of silane was studied in a microwave CVD system. The double dilution was achieved by using 2%SiH4 mixtures (balance of Ar or He) further diluted in H2. Low hydrogen content films deposited at low temperatures are demonstrated by the technique. The a-Si deposited using 2%SiH4/He shows approximately 8% H2 content and a compact nature. These films exhibit σD of 10-8 S/cm and a σD/σPH to approximately 10-4 μ c-Si films deposited on glass at temperatures of 300-450 °C, show high crystalline fraction and low dark conductivity (approximately 10-6 S/cm). With SiH4Ar, crystallinity could be initiated without H2 addition. Increased grain sizes and decreased H2 content were seen for increasing H2 dilution.

UR - https://www.scopus.com/pages/publications/0031345172

M3 - Conference article

SN - 0160-8371

SP - 675

EP - 678

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Amorphous and microcrystalline silicon by ECR-CVD using highly dilute silane mixtures

Abstract

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