@inproceedings{4b4860c9c6f4473f83a1fe71775309a1,
title = "An Analytical SiC MOSFET Switching Behavior Model Considering Parasitic Inductance and Temperature Effect",
abstract = "This paper presents an improved model to demonstrate the effect of parasitic inductance and temperature on switching behavior of silicon carbide MOSFET to offer a reference on power module design. The trans-conductance and parasitic capacitance non-linearity are also considered based on the numerical calculation method. The static and dynamic testing based on DBC and bare die with changeable parasitic inductance and temperature is designed and processed. The experiment shows a high accuracy.",
keywords = "SiC MOSFET, parasitic effects, switching model",
author = "Yiyang Yan and Zhiwei Wang and Cai Chen and Yong Kang and Zhao Yuan and Fang Luo",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 ; Conference date: 15-03-2020 Through 19-03-2020",
year = "2020",
month = mar,
doi = "10.1109/APEC39645.2020.9124548",
language = "English",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2829--2833",
booktitle = "APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition",
}