An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation

Yan Cui; Guofu Niu; David L. Harame

An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation

Yan Cui
, Guofu Niu
, David L. Harame

NY Creates Research Foundation

NY Creates

Auburn University

Research output: Contribution to conference › Paper › peer-review

22 Scopus citations

Abstract

This paper examines bipolar transistor noise modeling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modeling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.

Original language	English
Pages	225-228
Number of pages	4
State	Published - 2003
Event	Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting - Toulouse, France Duration: Sep 28 2003 → Sep 30 2003

Conference

Conference	Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting
Country/Territory	France
City	Toulouse
Period	09/28/03 → 09/30/03

Cite this

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title = "An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation",

abstract = "This paper examines bipolar transistor noise modeling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modeling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.",

author = "Yan Cui and Guofu Niu and Harame, \{David L.\}",

year = "2003",

language = "English",

pages = "225--228",

note = "Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting ; Conference date: 28-09-2003 Through 30-09-2003",

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TY - CONF

T1 - An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation

AU - Cui, Yan

AU - Niu, Guofu

AU - Harame, David L.

PY - 2003

Y1 - 2003

N2 - This paper examines bipolar transistor noise modeling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modeling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.

AB - This paper examines bipolar transistor noise modeling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modeling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.

UR - https://www.scopus.com/pages/publications/1042289131

M3 - Paper

SP - 225

EP - 228

T2 - Proceedings of the 2003 BIPOLAR/BICMOS Circuits and Technology Meeting

Y2 - 28 September 2003 through 30 September 2003

ER -

An examination of bipolar transistor noise modeling and noise physics using microscopic noise simulation

Abstract

Conference

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