An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs1-xSbx Quantum Dot Solar Cells

Yang Cheng; Anthony J. Meleco; Alison J. Roeth; Vincent R. Whiteside; Mukul C. Debnath; Tetsuya D. Mishima; Michael B. Santos; Sabina Hatch; Huiyun Liu; Ian R. Sellers

doi:10.1109/JPHOTOV.2017.2779325

An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs_1-xSb_x Quantum Dot Solar Cells

Yang Cheng
, Anthony J. Meleco
, Alison J. Roeth
, Vincent R. Whiteside
, Mukul C. Debnath
, Tetsuya D. Mishima
, Michael B. Santos
, Sabina Hatch
, Huiyun Liu
, Ian R. Sellers

Department of Electrical Engineering

University at Buffalo

University of Oklahoma
University College London

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

An InAs/GaAs_0.86Sb_0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density-voltage (J-V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.

Original language	English
Pages (from-to)	487-492
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2779325
State	Published - Mar 2018

Keywords

Defects
electroluminescence (EL)
nonradiative
recombination

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10.1109/JPHOTOV.2017.2779325

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title = "An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs1-xSbx Quantum Dot Solar Cells",

abstract = "An InAs/GaAs0.86Sb0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density-voltage (J-V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.",

keywords = "Defects, electroluminescence (EL), nonradiative, recombination",

author = "Yang Cheng and Meleco, \{Anthony J.\} and Roeth, \{Alison J.\} and Whiteside, \{Vincent R.\} and Debnath, \{Mukul C.\} and Mishima, \{Tetsuya D.\} and Santos, \{Michael B.\} and Sabina Hatch and Huiyun Liu and Sellers, \{Ian R.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2018",

month = mar,

doi = "10.1109/JPHOTOV.2017.2779325",

language = "English",

volume = "8",

pages = "487--492",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

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TY - JOUR

T1 - An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs1-xSbx Quantum Dot Solar Cells

AU - Cheng, Yang

AU - Meleco, Anthony J.

AU - Roeth, Alison J.

AU - Whiteside, Vincent R.

AU - Debnath, Mukul C.

AU - Mishima, Tetsuya D.

AU - Santos, Michael B.

AU - Hatch, Sabina

AU - Liu, Huiyun

AU - Sellers, Ian R.

PY - 2018/3

Y1 - 2018/3

N2 - An InAs/GaAs0.86Sb0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density-voltage (J-V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.

AB - An InAs/GaAs0.86Sb0.14 quantum dot solar cell and a GaAsSb control cell were investigated using temperature-dependent current density-voltage (J-V), external quantum efficiency, photoluminescence (PL), and electroluminescence (EL) measurements. Thermally activated defect states associated with the GaAsSb matrix material are found to account for the reduction of the performance of the solar cell. The rapid quenching of the PL and EL intensity, along with the shift (above 150 K) of the dominant recombination process during spontaneous emission (EL), further indicates the prevalence of nonradiative processes at elevated temperatures in these systems. These findings are also supported by a reduction in the open-circuit voltage at elevated temperatures in these devices.

KW - Defects

KW - electroluminescence (EL)

KW - nonradiative

KW - recombination

UR - https://www.scopus.com/pages/publications/85040036232

U2 - 10.1109/JPHOTOV.2017.2779325

DO - 10.1109/JPHOTOV.2017.2779325

M3 - Article

SN - 2156-3381

VL - 8

SP - 487

EP - 492

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 2

ER -

An Investigation of the Role of Radiative and Nonradiative Recombination Processes in InAs/GaAs_1-xSb_x Quantum Dot Solar Cells

Abstract

Keywords

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