TY - GEN
T1 - An Ultra-Low-Noise LDO Regulator in 65 nm for Analog Front-End ASICs in Cryogenic Environment
AU - Hou, Wenbin
AU - Li, Shaorui
AU - Geronimo, Gianluigi De
AU - Stanaćević, Milutin
N1 - Publisher Copyright: © 2018 IEEE.
PY - 2018/11
Y1 - 2018/11
N2 - Low dropout (LDO) voltage regulators, which provide a clean supply for analog and mixed-signal systems, are essential to low-noise front-end electronics in high energy physics experiments and beyond. This paper analyzes the noise sources in an LDO where the input referred noise of the error amplifier is the dominant noise source. Implemented in 65 nm technology, the LDO presented here regulates a noisy 1.5 V supply and outputs a stable and low-noise nominal 1.175 V voltage with load current ranging from a few milliamp up to 150 mA. The design achieves higher than 75% power efficiency at both room and cryogenic temperatures at maximum load, with more than 40 dB power supply rejection up to 400 kHz. The simulated RMS noise from 10 Hz to 100 kHz is less than 2 μV at room temperature and less than 1 μV at 77 K. The regulator requires an external capacitance of 50 μF for stability. A number of next-generation detectors can greatly benefit from having this voltage regulator directly integrated in the front-end application-specific integrated circuits (FE-ASICs) working at room and cryogenic temperatures.
AB - Low dropout (LDO) voltage regulators, which provide a clean supply for analog and mixed-signal systems, are essential to low-noise front-end electronics in high energy physics experiments and beyond. This paper analyzes the noise sources in an LDO where the input referred noise of the error amplifier is the dominant noise source. Implemented in 65 nm technology, the LDO presented here regulates a noisy 1.5 V supply and outputs a stable and low-noise nominal 1.175 V voltage with load current ranging from a few milliamp up to 150 mA. The design achieves higher than 75% power efficiency at both room and cryogenic temperatures at maximum load, with more than 40 dB power supply rejection up to 400 kHz. The simulated RMS noise from 10 Hz to 100 kHz is less than 2 μV at room temperature and less than 1 μV at 77 K. The regulator requires an external capacitance of 50 μF for stability. A number of next-generation detectors can greatly benefit from having this voltage regulator directly integrated in the front-end application-specific integrated circuits (FE-ASICs) working at room and cryogenic temperatures.
UR - https://www.scopus.com/pages/publications/85073119353
U2 - 10.1109/NSSMIC.2018.8824471
DO - 10.1109/NSSMIC.2018.8824471
M3 - Conference contribution
T3 - 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Proceedings
BT - 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2018
Y2 - 10 November 2018 through 17 November 2018
ER -