Application of quantum Hall devices for FIR detection

S. Suchalkin; Yu Vasilyev; Yu Ivanov; S. Ivanov; S. Kop'ev; B. Meltser; T. Ohyama

doi:10.1016/0038-1101(95)00312-6

Application of quantum Hall devices for FIR detection

S. Suchalkin
, Yu Vasilyev
, Yu Ivanov
, S. Ivanov
, S. Kop'ev
, B. Meltser
, T. Ohyama

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We propose a novel concept for FIR light detection by means of Hall devices biased at strong currents. The base of the device operation is the effect of photoinduced breakdown of the integer quantum Hall effect (QHE). We demonstrate experimentally that the increase of the bias current from 100 to 300 μA leads to the photoresponse enhancement by over two orders of magnitude. Application of the presented results for designing a tunable high sensitive FIR photodetector is discussed.

Original language	English
Pages (from-to)	469-472
Number of pages	4
Journal	Solid State Electronics
Volume	40
Issue number	1-8
DOIs	https://doi.org/10.1016/0038-1101(95)00312-6
State	Published - 1996

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title = "Application of quantum Hall devices for FIR detection",

abstract = "We propose a novel concept for FIR light detection by means of Hall devices biased at strong currents. The base of the device operation is the effect of photoinduced breakdown of the integer quantum Hall effect (QHE). We demonstrate experimentally that the increase of the bias current from 100 to 300 μA leads to the photoresponse enhancement by over two orders of magnitude. Application of the presented results for designing a tunable high sensitive FIR photodetector is discussed.",

author = "S. Suchalkin and Yu Vasilyev and Yu Ivanov and S. Ivanov and S. Kop'ev and B. Meltser and T. Ohyama",

year = "1996",

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language = "English",

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pages = "469--472",

journal = "Solid State Electronics",

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T1 - Application of quantum Hall devices for FIR detection

AU - Suchalkin, S.

AU - Vasilyev, Yu

AU - Ivanov, Yu

AU - Ivanov, S.

AU - Kop'ev, S.

AU - Meltser, B.

AU - Ohyama, T.

PY - 1996

Y1 - 1996

N2 - We propose a novel concept for FIR light detection by means of Hall devices biased at strong currents. The base of the device operation is the effect of photoinduced breakdown of the integer quantum Hall effect (QHE). We demonstrate experimentally that the increase of the bias current from 100 to 300 μA leads to the photoresponse enhancement by over two orders of magnitude. Application of the presented results for designing a tunable high sensitive FIR photodetector is discussed.

AB - We propose a novel concept for FIR light detection by means of Hall devices biased at strong currents. The base of the device operation is the effect of photoinduced breakdown of the integer quantum Hall effect (QHE). We demonstrate experimentally that the increase of the bias current from 100 to 300 μA leads to the photoresponse enhancement by over two orders of magnitude. Application of the presented results for designing a tunable high sensitive FIR photodetector is discussed.

UR - https://www.scopus.com/pages/publications/0029723516

U2 - 10.1016/0038-1101(95)00312-6

DO - 10.1016/0038-1101(95)00312-6

M3 - Article

SN - 0038-1101

VL - 40

SP - 469

EP - 472

JO - Solid State Electronics

JF - Solid State Electronics

IS - 1-8

ER -

Application of quantum Hall devices for FIR detection

Abstract

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