Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

E. Eisenbraun; O. Van Der Straten; Yu Zhu; K. Dovidenko; A. Kaloyeros

doi:10.1109/IITC.2001.930062

Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

E. Eisenbraun
, O. Van Der Straten
, Yu Zhu
, K. Dovidenko
, A. Kaloyeros

Nanoscale Science and Engineering

University at Albany

SUNY Albany

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH₃ as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.

Original language	English
Title of host publication	Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	207-209
Number of pages	3
ISBN (Electronic)	0780366786, 9780780366787
DOIs	https://doi.org/10.1109/IITC.2001.930062
State	Published - 2001
Event	IEEE International Interconnect Technology Conference, IITC 2001 - Burlingame, United States Duration: Jun 4 2001 → Jun 6 2001

Publication series

Name	Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

Conference

Conference	IEEE International Interconnect Technology Conference, IITC 2001
Country/Territory	United States
City	Burlingame
Period	06/4/01 → 06/6/01

Access to Document

10.1109/IITC.2001.930062

Cite this

Eisenbraun, E., Van Der Straten, O., Zhu, Y., Dovidenko, K., & Kaloyeros, A. (2001). Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications. In Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001 (pp. 207-209). Article 930062 (Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2001.930062

Eisenbraun, E. ; Van Der Straten, O. ; Zhu, Yu et al. / Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications. Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 207-209 (Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001).

@inproceedings{bf8c876cc99c44749370ae8cc1fcb6ca,

title = "Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications",

abstract = "A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH3 as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.",

author = "E. Eisenbraun and \{Van Der Straten\}, O. and Yu Zhu and K. Dovidenko and A. Kaloyeros",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; IEEE International Interconnect Technology Conference, IITC 2001 ; Conference date: 04-06-2001 Through 06-06-2001",

year = "2001",

doi = "10.1109/IITC.2001.930062",

language = "English",

series = "Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "207--209",

booktitle = "Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001",

}

Eisenbraun, E, Van Der Straten, O, Zhu, Y, Dovidenko, K & Kaloyeros, A 2001, Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications. in Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001., 930062, Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001, Institute of Electrical and Electronics Engineers Inc., pp. 207-209, IEEE International Interconnect Technology Conference, IITC 2001, Burlingame, United States, 06/4/01. https://doi.org/10.1109/IITC.2001.930062

Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications. / Eisenbraun, E.; Van Der Straten, O.; Zhu, Yu et al.
Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 207-209 930062 (Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

AU - Eisenbraun, E.

AU - Van Der Straten, O.

AU - Zhu, Yu

AU - Dovidenko, K.

AU - Kaloyeros, A.

PY - 2001

Y1 - 2001

N2 - A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH3 as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.

AB - A metalorganic atomic layer deposition (ALD) process has been demonstrated for advanced 'zero thickness' copper barrier applications. This process, which is carried out at substrate temperatures below 450°C on commercial ALD reactor, employs TBTDET and NH3 as the tantalum and nitrogen sources, respectively. Fundamental ALD functionality data is presented, including work performed on low-k dielectric substrates. The chemical, microstructural, and electrical performance of these films is presented, in addition to their conformality over high aspect ratio patterned structures, and implications for applications in advanced microelectronics processing will be discussed.

UR - https://www.scopus.com/pages/publications/85001136895

U2 - 10.1109/IITC.2001.930062

DO - 10.1109/IITC.2001.930062

M3 - Conference contribution

T3 - Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

SP - 207

EP - 209

BT - Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Interconnect Technology Conference, IITC 2001

Y2 - 4 June 2001 through 6 June 2001

ER -

Eisenbraun E, Van Der Straten O, Zhu Y, Dovidenko K, Kaloyeros A. Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications. In Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 207-209. 930062. (Proceedings of the IEEE 2001 International Interconnect Technology Conference, IITC 2001). doi: 10.1109/IITC.2001.930062

Atomic layer deposition (ALD) of tantalum-based materials for zero thickness copper barrier applications

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