Atomic structure of the GaAs(001) − (2 × 4) surface resolved using scanning tunneling microscopy and first-principles theory

V. P. La Bella; H. Yang; D. W. Bullock; P. M. Thibado; Peter Kratzer; Matthias Scheffler

doi:10.1103/PhysRevLett.83.2989

Atomic structure of the GaAs(001) − (2 × 4) surface resolved using scanning tunneling microscopy and first-principles theory

V. P. La Bella
, H. Yang
, D. W. Bullock
, P. M. Thibado
, Peter Kratzer
, Matthias Scheffler

Nanoscale Science and Engineering

University at Albany

University of Arkansas, Fayetteville
Fritz Haber Institute of the Max Planck Society

Research output: Contribution to journal › Article › peer-review

160 Scopus citations

Abstract

The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure. 1999

Original language	English
Pages (from-to)	2989-2992
Number of pages	4
Journal	Physical Review Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.83.2989
State	Published - Jan 1 1999

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10.1103/PhysRevLett.83.2989

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abstract = "The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure. 1999",

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AU - La Bella, V. P.

AU - Yang, H.

AU - Bullock, D. W.

AU - Thibado, P. M.

AU - Kratzer, Peter

AU - Scheffler, Matthias

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure. 1999

AB - The atomic arrangement of the technologically important As-rich GaAs(001)-(2×4) reconstructed surface is determined using bias-dependent scanning tunneling microscopy (STM) and first-principles electronic structure calculations. The STM images reveal the relative position and depth of the atomic-scale features within the trenches between the top-layer As dimers, which are in agreement with the β2(2×4) structural model. The bias-dependent simulated STM images reveal that a retraction of the topmost dangling bond orbitals is the novel electronic mechanism that enables the STM tip to image the trench structure. 1999

UR - https://www.scopus.com/pages/publications/4243315584

U2 - 10.1103/PhysRevLett.83.2989

DO - 10.1103/PhysRevLett.83.2989

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VL - 83

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EP - 2992

JO - Physical Review Letters

JF - Physical Review Letters

IS - 15

ER -

Atomic structure of the GaAs(001) − (2 × 4) surface resolved using scanning tunneling microscopy and first-principles theory

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