Ballistic field-effect transistor with negative-effective-mass current carriers in the channel

Z. Gribnikov; N. Vagidov; A. Korshak; V. Mitin

doi:10.1006/spmi.1999.0808

Ballistic field-effect transistor with negative-effective-mass current carriers in the channel

Z. Gribnikov
, N. Vagidov
, A. Korshak
, V. Mitin

Department of Electrical Engineering

University at Buffalo

Wayne State University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscillation frequency, amplitude, turning on and off).

Original language	English
Pages (from-to)	105-109
Number of pages	5
Journal	Superlattices and Microstructures
Volume	27
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1999.0808
State	Published - Feb 2000

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title = "Ballistic field-effect transistor with negative-effective-mass current carriers in the channel",

abstract = "We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscillation frequency, amplitude, turning on and off).",

author = "Z. Gribnikov and N. Vagidov and A. Korshak and V. Mitin",

year = "2000",

month = feb,

doi = "10.1006/spmi.1999.0808",

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AU - Gribnikov, Z.

AU - Vagidov, N.

AU - Korshak, A.

AU - Mitin, V.

PY - 2000/2

Y1 - 2000/2

N2 - We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscillation frequency, amplitude, turning on and off).

AB - We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potential controls the generator regime (including oscillation frequency, amplitude, turning on and off).

UR - https://www.scopus.com/pages/publications/0033751935

U2 - 10.1006/spmi.1999.0808

DO - 10.1006/spmi.1999.0808

M3 - Article

SN - 0749-6036

VL - 27

SP - 105

EP - 109

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Ballistic field-effect transistor with negative-effective-mass current carriers in the channel

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