(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

B. Nagaraj; T. Sawhney; S. Perusse; S. Aggarwal; R. Ramesh; V. S. Kaushik; S. Zafar; R. E. Jones; J. H. Lee; V. Balu; J. Lee

doi:10.1063/1.124104

(Ba,Sr)TiO₃ thin films with conducting perovskite electrodes for dynamic random access memory applications

B. Nagaraj
, T. Sawhney
, S. Perusse
, S. Aggarwal
, R. Ramesh
, V. S. Kaushik
, S. Zafar
, R. E. Jones
, J. H. Lee
, V. Balu
, J. Lee

NY Creates Research Foundation

NY Creates

University of Maryland, College Park
Motorola
University of Texas at Austin

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

The leakage current mechanism of (Ba,Sr)TiO₃ capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

Original language	English
Pages (from-to)	3194-3196
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	21
DOIs	https://doi.org/10.1063/1.124104
State	Published - May 24 1999

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title = "(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications",

abstract = "The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.",

author = "B. Nagaraj and T. Sawhney and S. Perusse and S. Aggarwal and R. Ramesh and Kaushik, \{V. S.\} and S. Zafar and Jones, \{R. E.\} and Lee, \{J. H.\} and V. Balu and J. Lee",

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doi = "10.1063/1.124104",

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T1 - (Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

AU - Nagaraj, B.

AU - Sawhney, T.

AU - Perusse, S.

AU - Aggarwal, S.

AU - Ramesh, R.

AU - Kaushik, V. S.

AU - Zafar, S.

AU - Jones, R. E.

AU - Lee, J. H.

AU - Balu, V.

AU - Lee, J.

PY - 1999/5/24

Y1 - 1999/5/24

N2 - The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

AB - The leakage current mechanism of (Ba,Sr)TiO3 capacitors were examined for dynamic random access memory applications. Leakage currents were measured in the temperature range 20-150 °C, and the data was analyzed for the various mechanisms. The extracted dielectric constant, corresponding to Poole-Frenkel mechanism, is in good agreement with the experimental value of the optical dielectric constant.

UR - https://www.scopus.com/pages/publications/0032607765

U2 - 10.1063/1.124104

DO - 10.1063/1.124104

M3 - Article

SN - 0003-6951

VL - 74

SP - 3194

EP - 3196

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

(Ba,Sr)TiO₃ thin films with conducting perovskite electrodes for dynamic random access memory applications

Abstract

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