Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices

Woongje Sung; Alex Q. Huang; B. Jayant Baliga

doi:10.1109/LED.2015.2427654

Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices

Woongje Sung
, Alex Q. Huang
, B. Jayant Baliga

Nanoscale Science and Engineering

University at Albany

North Carolina State University

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (∼ 95 % of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.

Original language	English
Article number	7097678
Pages (from-to)	594-596
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/LED.2015.2427654
State	Published - Jun 1 2015

Keywords

4H-SiC
Bevel Dicing
Edge Termination
PiN diode
junction termination extension (JTE)

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10.1109/LED.2015.2427654

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@article{e8684f03aa234ff68f5b1964c69cf5ce,

title = "Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices",

abstract = "A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (∼ 95 \% of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.",

keywords = "4H-SiC, Bevel Dicing, Edge Termination, PiN diode, junction termination extension (JTE)",

author = "Woongje Sung and Huang, \{Alex Q.\} and Baliga, \{B. Jayant\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/LED.2015.2427654",

language = "English",

volume = "36",

pages = "594--596",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices

AU - Sung, Woongje

AU - Huang, Alex Q.

AU - Baliga, B. Jayant

PY - 2015/6/1

Y1 - 2015/6/1

N2 - A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (∼ 95 % of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.

AB - A new edge termination method, referred to as a bevel junction termination extension (Bevel-JTE), is presented for high-voltage silicon carbide devices. The 4H-SiC PiN rectifiers, with a breakdown voltage of 1600 V (∼ 95 % of the theoretical value), were fabricated using Bevel-JTEs. The Bevel-JTE technique significantly reduces the chip size by decreasing space occupied by edge termination while providing broad process latitude for parameter variations, such as implantation dose and activation anneal condition.

KW - 4H-SiC

KW - Bevel Dicing

KW - Edge Termination

KW - PiN diode

KW - junction termination extension (JTE)

UR - https://www.scopus.com/pages/publications/84930504179

U2 - 10.1109/LED.2015.2427654

DO - 10.1109/LED.2015.2427654

M3 - Article

SN - 0741-3106

VL - 36

SP - 594

EP - 596

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 7097678

ER -

Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices

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Keywords

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