Bolometric response in graphene based superconducting tunnel junctions

Heli Vora; Piranavan Kumaravadivel; Bent Nielsen; Xu Du

doi:10.1063/1.3703117

Bolometric response in graphene based superconducting tunnel junctions

Heli Vora
, Piranavan Kumaravadivel
, Bent Nielsen
, Xu Du

Physics and Astronomy

Stony Brook University

Stony Brook University

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

We fabricate graphene-TiO _x-aluminum tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of aluminum and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power, and responsivity, are characterized.

Original language	English
Article number	153507
Journal	Applied Physics Letters
Volume	100
Issue number	15
DOIs	https://doi.org/10.1063/1.3703117
State	Published - Apr 9 2012

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abstract = "We fabricate graphene-TiO x-aluminum tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of aluminum and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power, and responsivity, are characterized.",

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AU - Kumaravadivel, Piranavan

AU - Nielsen, Bent

AU - Du, Xu

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N2 - We fabricate graphene-TiO x-aluminum tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of aluminum and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power, and responsivity, are characterized.

AB - We fabricate graphene-TiO x-aluminum tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of aluminum and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power, and responsivity, are characterized.

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DO - 10.1063/1.3703117

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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Bolometric response in graphene based superconducting tunnel junctions

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