Bound exciton diffusion in Si: B

S. R. Oktyabrsky; B. G. Zhurkin

doi:10.1016/0038-1098(85)91160-3

Bound exciton diffusion in Si: B

S. R. Oktyabrsky
, B. G. Zhurkin

Nanoscale Science and Engineering

University at Albany

P.N. Lebedev Physical Institute of the Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated.

Original language	English
Pages (from-to)	875-878
Number of pages	4
Journal	Solid State Communications
Volume	54
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(85)91160-3
State	Published - Jun 1985

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title = "Bound exciton diffusion in Si: B",

abstract = "Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated.",

author = "Oktyabrsky, \{S. R.\} and Zhurkin, \{B. G.\}",

year = "1985",

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AU - Oktyabrsky, S. R.

AU - Zhurkin, B. G.

PY - 1985/6

Y1 - 1985/6

N2 - Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated.

AB - Photoluminescence measurements as a function of excitation intensity and temperature are presented for moderately doped Si : B. Some evidence is obtained for hopping motion of the bound excitons around the impurity centers with trapping at the clusters of impurities. Kinetic parameters of the excitation transfer are estimated.

UR - https://www.scopus.com/pages/publications/0022075483

U2 - 10.1016/0038-1098(85)91160-3

DO - 10.1016/0038-1098(85)91160-3

M3 - Article

SN - 0038-1098

VL - 54

SP - 875

EP - 878

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Bound exciton diffusion in Si: B

Abstract

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