BTI characteristics and mechanisms of metal gated HfO2 films with enhanced Interface/Bulk Process Treatments

Sriram Kalpat; Hsing Huang Tseng; Michael Ramon; Mohamed Moosa; Daniel Tekleab; Philip J. Tobin; David C. Gilmer; Rama I. Hegde; C. Capasso; Clarence Tracy; Bruce E. White

doi:10.1109/TDMR.2005.845879

BTI characteristics and mechanisms of metal gated HfO₂ films with enhanced Interface/Bulk Process Treatments

Sriram Kalpat
, Hsing Huang Tseng
, Michael Ramon
, Mohamed Moosa
, Daniel Tekleab
, Philip J. Tobin
, David C. Gilmer
, Rama I. Hegde
, C. Capasso
, Clarence Tracy
, Bruce E. White

Physics

Binghamton University

Freescale Semiconductor

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Significant deviations in BTI characteristics for metal gate HfO ₂ films compared to silicon oxide based films prove that conventional reliability models based on SiO₂ films can no longer be directly applied to HfO₂ based MOSFETS. This study shows the use of conventional accelerated reliability testing in the Fowler-Nordheim tunneling regime to extrapolate time to failure at operating voltages (direct tunneling regime) overestimates device lifetimes. Additionally, unlike conventional gate oxides, the slope of △ V_t versus time (or the rate of charge trapping) in HfO₂ MOSFETS is dependent on stress voltage. The HfO₂ based metal gated nMOSFETS show poor PBTI characteristics and do not meet the 10 year lifetime criterion for threshold voltage stability. On the other hand, HfO₂ based pMOSFETS show superior NBTI behavior and meet the 10 year lifetime criterion. These results are contrary to the observations with conventional gate dielectrics. This paper explores the anomalous charge trapping behavior and provides a comprehensive study of the PBTI characteristics and recovery mechanisms in metal gated HfO₂ films.

Original language	English
Pages (from-to)	26-34
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	5
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2005.845879
State	Published - Mar 2005

Keywords

BTI
HfO
Reliability models

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10.1109/TDMR.2005.845879

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@article{3d889150f6d54a1f9afcd5ad9885b296,

title = "BTI characteristics and mechanisms of metal gated HfO2 films with enhanced Interface/Bulk Process Treatments",

abstract = "Significant deviations in BTI characteristics for metal gate HfO 2 films compared to silicon oxide based films prove that conventional reliability models based on SiO2 films can no longer be directly applied to HfO2 based MOSFETS. This study shows the use of conventional accelerated reliability testing in the Fowler-Nordheim tunneling regime to extrapolate time to failure at operating voltages (direct tunneling regime) overestimates device lifetimes. Additionally, unlike conventional gate oxides, the slope of △ Vt versus time (or the rate of charge trapping) in HfO2 MOSFETS is dependent on stress voltage. The HfO2 based metal gated nMOSFETS show poor PBTI characteristics and do not meet the 10 year lifetime criterion for threshold voltage stability. On the other hand, HfO2 based pMOSFETS show superior NBTI behavior and meet the 10 year lifetime criterion. These results are contrary to the observations with conventional gate dielectrics. This paper explores the anomalous charge trapping behavior and provides a comprehensive study of the PBTI characteristics and recovery mechanisms in metal gated HfO2 films.",

keywords = "BTI, HfO, Reliability models",

author = "Sriram Kalpat and Tseng, \{Hsing Huang\} and Michael Ramon and Mohamed Moosa and Daniel Tekleab and Tobin, \{Philip J.\} and Gilmer, \{David C.\} and Hegde, \{Rama I.\} and C. Capasso and Clarence Tracy and White, \{Bruce E.\}",

year = "2005",

month = mar,

doi = "10.1109/TDMR.2005.845879",

language = "English",

volume = "5",

pages = "26--34",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - BTI characteristics and mechanisms of metal gated HfO2 films with enhanced Interface/Bulk Process Treatments

AU - Kalpat, Sriram

AU - Tseng, Hsing Huang

AU - Ramon, Michael

AU - Moosa, Mohamed

AU - Tekleab, Daniel

AU - Tobin, Philip J.

AU - Gilmer, David C.

AU - Hegde, Rama I.

AU - Capasso, C.

AU - Tracy, Clarence

AU - White, Bruce E.

PY - 2005/3

Y1 - 2005/3

N2 - Significant deviations in BTI characteristics for metal gate HfO 2 films compared to silicon oxide based films prove that conventional reliability models based on SiO2 films can no longer be directly applied to HfO2 based MOSFETS. This study shows the use of conventional accelerated reliability testing in the Fowler-Nordheim tunneling regime to extrapolate time to failure at operating voltages (direct tunneling regime) overestimates device lifetimes. Additionally, unlike conventional gate oxides, the slope of △ Vt versus time (or the rate of charge trapping) in HfO2 MOSFETS is dependent on stress voltage. The HfO2 based metal gated nMOSFETS show poor PBTI characteristics and do not meet the 10 year lifetime criterion for threshold voltage stability. On the other hand, HfO2 based pMOSFETS show superior NBTI behavior and meet the 10 year lifetime criterion. These results are contrary to the observations with conventional gate dielectrics. This paper explores the anomalous charge trapping behavior and provides a comprehensive study of the PBTI characteristics and recovery mechanisms in metal gated HfO2 films.

AB - Significant deviations in BTI characteristics for metal gate HfO 2 films compared to silicon oxide based films prove that conventional reliability models based on SiO2 films can no longer be directly applied to HfO2 based MOSFETS. This study shows the use of conventional accelerated reliability testing in the Fowler-Nordheim tunneling regime to extrapolate time to failure at operating voltages (direct tunneling regime) overestimates device lifetimes. Additionally, unlike conventional gate oxides, the slope of △ Vt versus time (or the rate of charge trapping) in HfO2 MOSFETS is dependent on stress voltage. The HfO2 based metal gated nMOSFETS show poor PBTI characteristics and do not meet the 10 year lifetime criterion for threshold voltage stability. On the other hand, HfO2 based pMOSFETS show superior NBTI behavior and meet the 10 year lifetime criterion. These results are contrary to the observations with conventional gate dielectrics. This paper explores the anomalous charge trapping behavior and provides a comprehensive study of the PBTI characteristics and recovery mechanisms in metal gated HfO2 films.

KW - BTI

KW - HfO

KW - Reliability models

UR - https://www.scopus.com/pages/publications/20444499037

U2 - 10.1109/TDMR.2005.845879

DO - 10.1109/TDMR.2005.845879

M3 - Article

SN - 1530-4388

VL - 5

SP - 26

EP - 34

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 1

ER -

BTI characteristics and mechanisms of metal gated HfO₂ films with enhanced Interface/Bulk Process Treatments

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Keywords

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