C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

We report on integrated erbium-doped waveguide lasers designed for silicon photonic systems. The distributed Bragg reflector laser cavities consist of silicon nitride waveguide and grating features defined by wafer-scale immersion lithography and a top erbium-doped aluminum oxide layer deposited as the final step in the fabrication process. The resulting inverted ridge waveguide yields high optical intensity overlap with the active medium for both the 0.98 μmpump (89%) and 1.5 μmlaser (87%) wavelengths with a pump-laser intensity overlap of >93%. We obtain output powers of up to 5mWand show lasing at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536, 1561, and 1596 nm).