TY - GEN
T1 - Carbon films prepared by plasma deposition using a graphite cathode
AU - Wang, Zheng Yu
AU - Chung, D. D.L.
AU - Etemadi, Kasra
PY - 1991
Y1 - 1991
N2 - Amorphous carbon thick films were deposited at a rate of 0.2-0.5 μm/min on alumina by DC arc plasma deposition using a graphite cathode. By adjusting the deposition conditions, particularly the substrate position in the deposition chamber, the resulting film had an electrical resistivity ranging from 10-4 to 108 Ω.cm. For films of resistivity 108 Ω.cm, (i) the Knoop microhardness reached 2900 Kg/mm2, (ii) Raman scattering revealed a diamond peak at 1330 cm-1, and (iii) the films were not affected by immersion in aqua regia for 10 min. The corrosion resistance, hardness and density increased with increasing electrical resistivity, whereas the oxidation resistance decreased with increasing resistivity.
AB - Amorphous carbon thick films were deposited at a rate of 0.2-0.5 μm/min on alumina by DC arc plasma deposition using a graphite cathode. By adjusting the deposition conditions, particularly the substrate position in the deposition chamber, the resulting film had an electrical resistivity ranging from 10-4 to 108 Ω.cm. For films of resistivity 108 Ω.cm, (i) the Knoop microhardness reached 2900 Kg/mm2, (ii) Raman scattering revealed a diamond peak at 1330 cm-1, and (iii) the films were not affected by immersion in aqua regia for 10 min. The corrosion resistance, hardness and density increased with increasing electrical resistivity, whereas the oxidation resistance decreased with increasing resistivity.
UR - https://www.scopus.com/pages/publications/0025902938
M3 - Conference contribution
SN - 0938994581
T3 - Electronic Materials: Technology, Here and Now
SP - 487
EP - 498
BT - Electronic Materials
PB - Publ by SAMPE
T2 - 5th Annual International Sampe Electronics Conference
Y2 - 18 June 1991 through 20 June 1991
ER -