TY - GEN
T1 - Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
AU - Shterengas, L.
AU - Donetsky, D.
AU - Kisin, M.
AU - Belenky, G.
PY - 2007
Y1 - 2007
N2 - Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
AB - Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.
UR - https://www.scopus.com/pages/publications/84898979988
UR - https://www.scopus.com/pages/publications/82955245661
U2 - 10.1109/CLEO.2007.4453605
DO - 10.1109/CLEO.2007.4453605
M3 - Conference contribution
SN - 1557528349
SN - 9781557528346
T3 - Optics InfoBase Conference Papers
BT - Conference on Lasers and Electro-Optics, CLEO 2007
PB - Optical Society of America
T2 - Conference on Lasers and Electro-Optics, CLEO 2007
Y2 - 6 May 2007 through 6 May 2007
ER -