Carrier capture in InGaAsSbInAsInGaSb type-II laser heterostructures

L. Shterengas; R. Kaspi; A. P. Ongstad; S. Suchalkin; G. Belenky

doi:10.1063/1.2771037

Carrier capture in InGaAsSbInAsInGaSb type-II laser heterostructures

L. Shterengas
, R. Kaspi
, A. P. Ongstad
, S. Suchalkin
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures were performed. Capture of electrons and holes was studied separately in specially designed and grown laser heterostructures with QWs only for electrons or only for holes. The difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

Original language	English
Article number	101106
Journal	Applied Physics Letters
Volume	91
Issue number	10
DOIs	https://doi.org/10.1063/1.2771037
State	Published - 2007

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10.1063/1.2771037

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title = "Carrier capture in InGaAsSbInAsInGaSb type-II laser heterostructures",

abstract = "Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures were performed. Capture of electrons and holes was studied separately in specially designed and grown laser heterostructures with QWs only for electrons or only for holes. The difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.",

author = "L. Shterengas and R. Kaspi and Ongstad, \{A. P.\} and S. Suchalkin and G. Belenky",

year = "2007",

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journal = "Applied Physics Letters",

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T1 - Carrier capture in InGaAsSbInAsInGaSb type-II laser heterostructures

AU - Shterengas, L.

AU - Kaspi, R.

AU - Ongstad, A. P.

AU - Suchalkin, S.

AU - Belenky, G.

PY - 2007

Y1 - 2007

N2 - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures were performed. Capture of electrons and holes was studied separately in specially designed and grown laser heterostructures with QWs only for electrons or only for holes. The difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

AB - Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures were performed. Capture of electrons and holes was studied separately in specially designed and grown laser heterostructures with QWs only for electrons or only for holes. The difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

UR - https://www.scopus.com/pages/publications/34548508391

U2 - 10.1063/1.2771037

DO - 10.1063/1.2771037

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101106

ER -

Carrier capture in InGaAsSbInAsInGaSb type-II laser heterostructures

Abstract

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