Carrier heating in quantum wells under optical and current injection of electron-hole pairs

L. E. Vorobjev; M. Ya Vinnichenko; D. A. Firsov; V. L. Zerova; V. Yu Panevin; A. N. Sofronov; P. Thumrongsilapa; V. M. Ustinov; A. E. Zhukov; A. P. Vasiljev; L. Shterengas; G. Kipshidze; T. Hosoda; G. Belenky

doi:10.1134/S1063782610110047

Carrier heating in quantum wells under optical and current injection of electron-hole pairs

L. E. Vorobjev
, M. Ya Vinnichenko
, D. A. Firsov
, V. L. Zerova
, V. Yu Panevin
, A. N. Sofronov
, P. Thumrongsilapa
, V. M. Ustinov
, A. E. Zhukov
, A. P. Vasiljev
, L. Shterengas
, G. Kipshidze
, T. Hosoda
, G. Belenky

Electrical Engineering

Stony Brook University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.

Original language	English
Pages (from-to)	1402-1405
Number of pages	4
Journal	Semiconductors
Volume	44
Issue number	11
DOIs	https://doi.org/10.1134/S1063782610110047
State	Published - Nov 2010

Access to Document

10.1134/S1063782610110047

Cite this

Vorobjev, L. E., Vinnichenko, M. Y., Firsov, D. A., Zerova, V. L., Panevin, V. Y., Sofronov, A. N., Thumrongsilapa, P., Ustinov, V. M., Zhukov, A. E., Vasiljev, A. P., Shterengas, L., Kipshidze, G., Hosoda, T., & Belenky, G. (2010). Carrier heating in quantum wells under optical and current injection of electron-hole pairs. Semiconductors, 44(11), 1402-1405. https://doi.org/10.1134/S1063782610110047

@article{8c3c959871ec4704b2aa44f948dcce09,

title = "Carrier heating in quantum wells under optical and current injection of electron-hole pairs",

abstract = "Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.",

author = "Vorobjev, \{L. E.\} and Vinnichenko, \{M. Ya\} and Firsov, \{D. A.\} and Zerova, \{V. L.\} and Panevin, \{V. Yu\} and Sofronov, \{A. N.\} and P. Thumrongsilapa and Ustinov, \{V. M.\} and Zhukov, \{A. E.\} and Vasiljev, \{A. P.\} and L. Shterengas and G. Kipshidze and T. Hosoda and G. Belenky",

year = "2010",

month = nov,

doi = "10.1134/S1063782610110047",

language = "English",

volume = "44",

pages = "1402--1405",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "11",

}

Vorobjev, LE, Vinnichenko, MY, Firsov, DA, Zerova, VL, Panevin, VY, Sofronov, AN, Thumrongsilapa, P, Ustinov, VM, Zhukov, AE, Vasiljev, AP, Shterengas, L, Kipshidze, G, Hosoda, T & Belenky, G 2010, 'Carrier heating in quantum wells under optical and current injection of electron-hole pairs', Semiconductors, vol. 44, no. 11, pp. 1402-1405. https://doi.org/10.1134/S1063782610110047

TY - JOUR

T1 - Carrier heating in quantum wells under optical and current injection of electron-hole pairs

AU - Vorobjev, L. E.

AU - Vinnichenko, M. Ya

AU - Firsov, D. A.

AU - Zerova, V. L.

AU - Panevin, V. Yu

AU - Sofronov, A. N.

AU - Thumrongsilapa, P.

AU - Ustinov, V. M.

AU - Zhukov, A. E.

AU - Vasiljev, A. P.

AU - Shterengas, L.

AU - Kipshidze, G.

AU - Hosoda, T.

AU - Belenky, G.

PY - 2010/11

Y1 - 2010/11

N2 - Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.

AB - Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated.

UR - https://www.scopus.com/pages/publications/78649373462

U2 - 10.1134/S1063782610110047

DO - 10.1134/S1063782610110047

M3 - Article

SN - 1063-7826

VL - 44

SP - 1402

EP - 1405

JO - Semiconductors

JF - Semiconductors

IS - 11

ER -

Carrier heating in quantum wells under optical and current injection of electron-hole pairs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this