Cascaded homojunction avalanche photodiodes

F. S. Choa; P. L. Liu

doi:10.1080/01468038808219347

Cascaded homojunction avalanche photodiodes

F. S. Choa
, P. L. Liu

Department of Electrical Engineering

University at Buffalo

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device’s performance.

Original language	English
Pages (from-to)	1-15
Number of pages	15
Journal	Fiber and Integrated Optics
Volume	7
Issue number	1
DOIs	https://doi.org/10.1080/01468038808219347
State	Published - 1988

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10.1080/01468038808219347

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title = "Cascaded homojunction avalanche photodiodes",

abstract = "The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device{\textquoteright}s performance.",

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AU - Choa, F. S.

AU - Liu, P. L.

PY - 1988

Y1 - 1988

N2 - The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device’s performance.

AB - The structure and the performance of a cascaded avalanche photodiode (APD) based on cascaded home-junctions are discussed. Similar to the hetero-structure superlattice APD, such a device has a lower excess noise and a higher gain at lower bias voltages than conventional APDs. In addition to the ionization ratio, several parameters also affect the device’s performance.

UR - https://www.scopus.com/pages/publications/0023844564

U2 - 10.1080/01468038808219347

DO - 10.1080/01468038808219347

M3 - Article

SN - 0146-8030

VL - 7

SP - 1

EP - 15

JO - Fiber and Integrated Optics

JF - Fiber and Integrated Optics

IS - 1

ER -

Cascaded homojunction avalanche photodiodes

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