Chalcogenide perovskites - an emerging class of ionic semiconductors

Samanthe Perera; Haolei Hui; Chuan Zhao; Hongtao Xue; Fan Sun; Chenhua Deng; Nelson Gross; Chris Milleville; Xiaohong Xu; David F. Watson; Bernard Weinstein; Yi Yang Sun; Shengbai Zhang; Hao Zeng

doi:10.1016/j.nanoen.2016.02.020

Chalcogenide perovskites - an emerging class of ionic semiconductors

Samanthe Perera
, Haolei Hui
, Chuan Zhao
, Hongtao Xue
, Fan Sun
, Chenhua Deng
, Nelson Gross
, Chris Milleville
, Xiaohong Xu
, David F. Watson
, Bernard Weinstein
, Yi Yang Sun
, Shengbai Zhang
, Hao Zeng

University at Buffalo

SUNY Buffalo
Xi'an Jiaotong University
Shanxi Normal University
Rensselaer Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

294 Scopus citations

Abstract

We report the synthesis and characterization of a novel class of ionic semiconductor materials - inorganic chalcogenide perovskites. Several different compounds including BaZrS₃, CaZrS₃, SrTiS₃ and SrZrS₃ were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.

Original language	English
Pages (from-to)	129-135
Number of pages	7
Journal	Nano Energy
Volume	22
DOIs	https://doi.org/10.1016/j.nanoen.2016.02.020
State	Published - Apr 1 2016

Keywords

Band gap engineering
Chalcogenide perovskite
Ionic semiconductor
Sulfurization

Access to Document

10.1016/j.nanoen.2016.02.020

Cite this

@article{43f7ccceb8184ca084390f90a6366df1,

title = "Chalcogenide perovskites - an emerging class of ionic semiconductors",

abstract = "We report the synthesis and characterization of a novel class of ionic semiconductor materials - inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.",

keywords = "Band gap engineering, Chalcogenide perovskite, Ionic semiconductor, Sulfurization",

author = "Samanthe Perera and Haolei Hui and Chuan Zhao and Hongtao Xue and Fan Sun and Chenhua Deng and Nelson Gross and Chris Milleville and Xiaohong Xu and Watson, \{David F.\} and Bernard Weinstein and Sun, \{Yi Yang\} and Shengbai Zhang and Hao Zeng",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd.",

year = "2016",

month = apr,

day = "1",

doi = "10.1016/j.nanoen.2016.02.020",

language = "English",

volume = "22",

pages = "129--135",

journal = "Nano Energy",

issn = "2211-2855",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Chalcogenide perovskites - an emerging class of ionic semiconductors

AU - Perera, Samanthe

AU - Hui, Haolei

AU - Zhao, Chuan

AU - Xue, Hongtao

AU - Sun, Fan

AU - Deng, Chenhua

AU - Gross, Nelson

AU - Milleville, Chris

AU - Xu, Xiaohong

AU - Watson, David F.

AU - Weinstein, Bernard

AU - Sun, Yi Yang

AU - Zhang, Shengbai

AU - Zeng, Hao

PY - 2016/4/1

Y1 - 2016/4/1

N2 - We report the synthesis and characterization of a novel class of ionic semiconductor materials - inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.

AB - We report the synthesis and characterization of a novel class of ionic semiconductor materials - inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.

KW - Band gap engineering

KW - Chalcogenide perovskite

KW - Ionic semiconductor

KW - Sulfurization

UR - https://www.scopus.com/pages/publications/84959323056

U2 - 10.1016/j.nanoen.2016.02.020

DO - 10.1016/j.nanoen.2016.02.020

M3 - Article

SN - 2211-2855

VL - 22

SP - 129

EP - 135

JO - Nano Energy

JF - Nano Energy

ER -

Chalcogenide perovskites - an emerging class of ionic semiconductors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this