Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations

Silicon carbide (SiC) is an important semiconductor material for a variety of electronic and optoelectronic applications owing to the unique combination of its superior electronic and physical properties. In order to continuously improve the crystal quality and improve device performance, obtaining a clear understanding of the defect types and their distribution and potential influence on device operation is of great importance. In this study, 6H-SiC crystals grown by physical vapor transport (PVT) have been characterized by synchrotron monochromatic beam x-ray topography (SMBXT). By recording six different 11 2 ¯ , 12 grazing incidence reflections and analyzing the contrast patterns of threading screw dislocations (TSDs), threading edge dislocations (TEDs), threading mixed dislocations (TMDs), and basal plane dislocations (BPDs) observed in conjunction with ray-tracing simulation, the Burgers vectors of these dislocations have been determined. This successfully demonstrated a direct Burgers vector determination approach for each type of dislocation. Understanding these dislocation types and their distributions in 6H-SiC wafers can provide crucial feedback for pursuing crystal quality enhancement during growth process. High-resolution x-ray diffraction (HRXRD) has been performed on the wafer to carry out the rocking curve analysis of areas with different degrees of lattice distortion.