@inproceedings{8e24378c6e704adeb201da876c2b5f7b,
title = "Characterization of single-crystal 3C-SiC epitaxial layers on Si substrates",
abstract = "In this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.",
author = "Saddow, \{S. E.\} and Okhusyen, \{M. E.\} and Mazzola, \{M. S.\} and M. Dudley and Huang, \{X. R.\} and W. Huang and H. Su and M. Shamsuzzoha and Lo, \{Y. H.\}",
year = "1999",
language = "English",
isbn = "1558994416",
series = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",
pages = "107--112",
booktitle = "Materials Research Society Symposium - Proceedings",
note = "Proceedings of the 1998 MRS Fall Meeting - Symposium D: 'Integration of Dissimilar Materials in Micro- and Optoelectronics - Symposium I: 'III-V and SiGe Group IV Device/IC Processing Challeneges for Commercial Applications' ; Conference date: 30-11-1998 Through 03-12-1998",
}