Charge carrier recombination mechanisms in sb-containing quantum well laser structures

The dynamics of interband luminescence in structures with InGaAsSb-based quantum wells and barriers of different types was studied at different temperatures and excitation levels. The lifetime of optically injected charge carriers in quantum wells at different temperatures and optical excitation levels was determined. An increased recombination rate in structures with deep electron quantum wells was discovered; it is associated with the occurrence of resonance Auger recombination. It was concluded that the application of quinary solid solutions as barriers in laser structures for a 3-4 μm wavelength range is to be preferred.