TY - JOUR
T1 - Charge reconstruction from binary hit data on irradiated MALTA2 Czochralski sensors
AU - Fasselt, Lucian
AU - Asensi Tortajada, Ignacio
AU - Behera, Prafulla
AU - Berlea, Dumitru Vlad
AU - Bortoletto, Daniela
AU - Buttar, Craig
AU - Dao, Valerio
AU - Dash, Ganapati
AU - Flores Sanz de Acedo, Leyre
AU - Gazi, Martin
AU - Gonella, Laura
AU - Haberl, Sebastian
AU - Inada, Tomohiro
AU - Jana, Pranati
AU - Li, Long
AU - Pernegger, Heinz
AU - Riedler, Petra
AU - Snoeys, Walter
AU - Solans Sánchez, Carlos
AU - van Rijnbach, Milou
AU - Vázquez Núñez, Marcos
AU - Vijay, Anusree
AU - Weick, Julian
AU - Worm, Steven
N1 - Publisher Copyright: © 2025
PY - 2025/11
Y1 - 2025/11
N2 - MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and is produced in the modified Tower 180 nm CMOS imaging technology. The pixel pitch is 36.4 µm and the sensing layer consists of either high resistivity epitaxial or Czochralski silicon. The implementation of a small collection electrode features a small pixel capacitance and offers low noise. Typically a detection threshold of around 200 e− is used. It is calibrated making use of a dedicated charge injection circuit on chip and an Fe-55 source. In this contribution, MALTA2 sensors are characterized in terms of hit detection efficiency inside the pixel at fine threshold steps. A comparison is made for samples before and after irradiation at different substrate voltages and with different doping concentration of the internal n-layer. Data was taken at CERN SPS test beam campaigns in 2023 and 2024, using the MALTA beam telescope consisting of six MALTA tracking planes with 4 µm spatial and 2 ns timing resolution. A reconstruction of the most probable signal amplitude from binary hit data is performed. A two-dimensional map of the collected charge is obtained with sub-pixel resolution. The presented method provides an in-beam alternative to grazing angle studies or Edge-TCT for determining a charge collection profile.
AB - MALTA2 is a depleted monolithic active pixel sensor (DMAPS) designed for tracking at high rates and is produced in the modified Tower 180 nm CMOS imaging technology. The pixel pitch is 36.4 µm and the sensing layer consists of either high resistivity epitaxial or Czochralski silicon. The implementation of a small collection electrode features a small pixel capacitance and offers low noise. Typically a detection threshold of around 200 e− is used. It is calibrated making use of a dedicated charge injection circuit on chip and an Fe-55 source. In this contribution, MALTA2 sensors are characterized in terms of hit detection efficiency inside the pixel at fine threshold steps. A comparison is made for samples before and after irradiation at different substrate voltages and with different doping concentration of the internal n-layer. Data was taken at CERN SPS test beam campaigns in 2023 and 2024, using the MALTA beam telescope consisting of six MALTA tracking planes with 4 µm spatial and 2 ns timing resolution. A reconstruction of the most probable signal amplitude from binary hit data is performed. A two-dimensional map of the collected charge is obtained with sub-pixel resolution. The presented method provides an in-beam alternative to grazing angle studies or Edge-TCT for determining a charge collection profile.
KW - 180 nm
KW - Charge collection
KW - DMAPS
KW - High-energy physics
KW - Irradiation study
KW - Tracking
UR - https://www.scopus.com/pages/publications/105008733965
U2 - 10.1016/j.nima.2025.170747
DO - 10.1016/j.nima.2025.170747
M3 - Article
SN - 0168-9002
VL - 1080
JO - Nuclear Inst. and Methods in Physics Research, A
JF - Nuclear Inst. and Methods in Physics Research, A
M1 - 170747
ER -