@inproceedings{7b157c30eb464a1f8e6991fe97833b67,
title = "CMOS compatible integrated ferroelectric tunnel junctions (FTJ)",
abstract = "As traditional CMOS scaling reaches fundamental limits, there is an increasing interest in non-charge based beyond CMOS devices that could increase the functionality of logic chips [1]. Ferroelectric tunnel junction (FTJ) devices are attractive due to their large ON/OFF ratios, non-volatile, and low energy operation [2]. Switching has been demonstrated in the metal-ferroelectric-metal (M-F-M) FTJs in non-integrated devices that use the conductive atomic force microscope (AFM) tip as an electrode [3-4]. However, it is necessary to investigate the CMOS compatibility, scalability, switching speed and switching dynamics in an integrated FTJ device. We report a CMOS compatible integrated FTJ fabrication process that is scalable from micron to deep submicron dimensions. The first generation integrated FTJs show switching with peak ON/OFF ratio of 60. We also report the scalability of the ferroelectric polarization loop to 550 nm × 550 nm device. Conductivity degradation of the LaxSr1-xMnO3 (LSMO) bottom conductor is observed due to reactive ion etch (RIE) process that impacts device performance.",
keywords = "CMOS integrated circuits, Force, Gold, Lead, Resistance, Switching circuits",
author = "Mohammad Abuwasib and Hyungwoo Lee and Pankaj Sharma and Eom, \{Chang Beom\} and Alexei Gruverman and Uttam Singisetti",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175545",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "45--46",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}