CMOS ISFET microsystem for biomedical applications

V. P. Chodavarapu; A. H. Titus; A. N. Cartwright

doi:10.1109/ICSENS.2005.1597648

CMOS ISFET microsystem for biomedical applications

V. P. Chodavarapu
, A. H. Titus
, A. N. Cartwright

Department of Biomedical Engineering

University at Buffalo

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

The development of a novel differential readout architecture for CMOS ion-sensitive field-effect transistorbased (ISFETs) Microsystems is described. The ISFETs are fabricated using a standard CMOS process. A differential measurement between two ISFET Operational Transconductance Amplifiers (IOTAs), and a gold wire as a pseudo reference electrode, is used to monitor pH changes. Specifically, these two IOTAs have different pH sensitivities, a function of the size of two MOSFETs in the two IOTAs. The microsystem uses silicon nitride (Si₃N₄) as the pH sensitive layer and has a sensitivity of 40-45 mV/pH. The ISFET layout uses an extended gate approach that reduces leakage, drift and packaging constraints. The microsystem provides a low cost, low power and disposable pH monitoring platform for biomedical applications.

Original language	English
Title of host publication	Proceedings of the Fourth IEEE Conference on Sensors 2005
Pages	109-112
Number of pages	4
DOIs	https://doi.org/10.1109/ICSENS.2005.1597648
State	Published - 2005
Event	Fourth IEEE Conference on Sensors 2005 - Irvine, CA, United States Duration: Oct 31 2005 → Nov 3 2005

Publication series

Name	Proceedings of IEEE Sensors
Volume	2005

Conference

Conference	Fourth IEEE Conference on Sensors 2005
Country/Territory	United States
City	Irvine, CA
Period	10/31/05 → 11/3/05

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10.1109/ICSENS.2005.1597648

Cite this

@inproceedings{8690498200734d7dbd7da1dc9d566572,

title = "CMOS ISFET microsystem for biomedical applications",

abstract = "The development of a novel differential readout architecture for CMOS ion-sensitive field-effect transistorbased (ISFETs) Microsystems is described. The ISFETs are fabricated using a standard CMOS process. A differential measurement between two ISFET Operational Transconductance Amplifiers (IOTAs), and a gold wire as a pseudo reference electrode, is used to monitor pH changes. Specifically, these two IOTAs have different pH sensitivities, a function of the size of two MOSFETs in the two IOTAs. The microsystem uses silicon nitride (Si3N4) as the pH sensitive layer and has a sensitivity of 40-45 mV/pH. The ISFET layout uses an extended gate approach that reduces leakage, drift and packaging constraints. The microsystem provides a low cost, low power and disposable pH monitoring platform for biomedical applications.",

author = "Chodavarapu, \{V. P.\} and Titus, \{A. H.\} and Cartwright, \{A. N.\}",

year = "2005",

doi = "10.1109/ICSENS.2005.1597648",

language = "English",

isbn = "0780390563",

series = "Proceedings of IEEE Sensors",

pages = "109--112",

booktitle = "Proceedings of the Fourth IEEE Conference on Sensors 2005",

note = "Fourth IEEE Conference on Sensors 2005 ; Conference date: 31-10-2005 Through 03-11-2005",

}

TY - GEN

T1 - CMOS ISFET microsystem for biomedical applications

AU - Chodavarapu, V. P.

AU - Titus, A. H.

AU - Cartwright, A. N.

PY - 2005

Y1 - 2005

N2 - The development of a novel differential readout architecture for CMOS ion-sensitive field-effect transistorbased (ISFETs) Microsystems is described. The ISFETs are fabricated using a standard CMOS process. A differential measurement between two ISFET Operational Transconductance Amplifiers (IOTAs), and a gold wire as a pseudo reference electrode, is used to monitor pH changes. Specifically, these two IOTAs have different pH sensitivities, a function of the size of two MOSFETs in the two IOTAs. The microsystem uses silicon nitride (Si3N4) as the pH sensitive layer and has a sensitivity of 40-45 mV/pH. The ISFET layout uses an extended gate approach that reduces leakage, drift and packaging constraints. The microsystem provides a low cost, low power and disposable pH monitoring platform for biomedical applications.

AB - The development of a novel differential readout architecture for CMOS ion-sensitive field-effect transistorbased (ISFETs) Microsystems is described. The ISFETs are fabricated using a standard CMOS process. A differential measurement between two ISFET Operational Transconductance Amplifiers (IOTAs), and a gold wire as a pseudo reference electrode, is used to monitor pH changes. Specifically, these two IOTAs have different pH sensitivities, a function of the size of two MOSFETs in the two IOTAs. The microsystem uses silicon nitride (Si3N4) as the pH sensitive layer and has a sensitivity of 40-45 mV/pH. The ISFET layout uses an extended gate approach that reduces leakage, drift and packaging constraints. The microsystem provides a low cost, low power and disposable pH monitoring platform for biomedical applications.

UR - https://www.scopus.com/pages/publications/33847270233

U2 - 10.1109/ICSENS.2005.1597648

DO - 10.1109/ICSENS.2005.1597648

M3 - Conference contribution

SN - 0780390563

SN - 9780780390560

T3 - Proceedings of IEEE Sensors

SP - 109

EP - 112

BT - Proceedings of the Fourth IEEE Conference on Sensors 2005

T2 - Fourth IEEE Conference on Sensors 2005

Y2 - 31 October 2005 through 3 November 2005

ER -

CMOS ISFET microsystem for biomedical applications

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