Combined MOCVD and MBE growth of GaN on porous SiC

Ashutosh Sagar; R. M. Feenstra; C. K. Inoki; T. S. Kuan; D. D. Koleske

doi:10.1557/proc-798-y9.6

Combined MOCVD and MBE growth of GaN on porous SiC

Ashutosh Sagar
, R. M. Feenstra
, C. K. Inoki
, T. S. Kuan
, D. D. Koleske

Physics

University at Albany

Carnegie Mellon University
SUNY Albany
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from ≥1×10¹⁰ cm^-2 in the MBE template to 2.5×10⁹ cm^-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.

Original language	English
Pages (from-to)	409-414
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	798
DOIs	https://doi.org/10.1557/proc-798-y9.6
State	Published - 2003
Event	GaN and Related Alloys - 2003 - Boston, MA, United States Duration: Dec 1 2003 → Dec 5 2003

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title = "Combined MOCVD and MBE growth of GaN on porous SiC",

abstract = "GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from ≥1×1010 cm-2 in the MBE template to 2.5×109 cm-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.",

author = "Ashutosh Sagar and Feenstra, \{R. M.\} and Inoki, \{C. K.\} and Kuan, \{T. S.\} and Koleske, \{D. D.\}",

year = "2003",

doi = "10.1557/proc-798-y9.6",

language = "English",

volume = "798",

pages = "409--414",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "GaN and Related Alloys - 2003 ; Conference date: 01-12-2003 Through 05-12-2003",

}

TY - JOUR

T1 - Combined MOCVD and MBE growth of GaN on porous SiC

AU - Sagar, Ashutosh

AU - Feenstra, R. M.

AU - Inoki, C. K.

AU - Kuan, T. S.

AU - Koleske, D. D.

PY - 2003

Y1 - 2003

N2 - GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from ≥1×1010 cm-2 in the MBE template to 2.5×109 cm-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.

AB - GaN films have been grown homoepitaxially by MOCVD on MBE-grown GaN template layers, using both porous and nonporous SiC substrates. The effect of the porous SiC substrates on dislocations in the MBE and MOCVD GaN layers has been studied using TEM and x-ray characterization. A reduction in dislocation density from ≥1×1010 cm-2 in the MBE template to 2.5×109 cm-2 at the top of the MOCVD film is found, with similar final values in the MOCVD films for both porous and nonporous substrates. We discuss various mechanisms by which dislocation density is reduced in the MOCVD layers.

UR - https://www.scopus.com/pages/publications/2942720696

U2 - 10.1557/proc-798-y9.6

DO - 10.1557/proc-798-y9.6

M3 - Conference article

SN - 0272-9172

VL - 798

SP - 409

EP - 414

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys - 2003

Y2 - 1 December 2003 through 5 December 2003

ER -

Combined MOCVD and MBE growth of GaN on porous SiC

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