Compact inverted-spacer TFT for high-density SRAMs

J. R. Pfiester; J. H. Lin; K. Mocala; Y. C. Ku; J. Higman; T. McNelly; M. Blackwell; V. Kaushik; B. M. James; R. I. Hegde

Compact inverted-spacer TFT for high-density SRAMs

J. R. Pfiester
, J. H. Lin
, K. Mocala
, Y. C. Ku
, J. Higman
, T. McNelly
, M. Blackwell
, V. Kaushik
, B. M. James
, R. I. Hegde

NY Creates Research Foundation

NY Creates

Motorola

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper, a new compact inverted-spacer TFT has been developed for advanced SRAM applications. This compact load element can provide excellent device characteristics using a cavity-defined channel polysilicon layer which surrounds the gate electrode. This TFT is a suitable candidate for advanced SRAM bitcells.

Original language	English
Pages (from-to)	101-102
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
State	Published - 1994
Event	Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA Duration: Jun 7 1994 → Jun 9 1994

Cite this

@article{a6eb5034d3154a2c8ebd162295991ac2,

title = "Compact inverted-spacer TFT for high-density SRAMs",

abstract = "In this paper, a new compact inverted-spacer TFT has been developed for advanced SRAM applications. This compact load element can provide excellent device characteristics using a cavity-defined channel polysilicon layer which surrounds the gate electrode. This TFT is a suitable candidate for advanced SRAM bitcells.",

author = "Pfiester, \{J. R.\} and Lin, \{J. H.\} and K. Mocala and Ku, \{Y. C.\} and J. Higman and T. McNelly and M. Blackwell and V. Kaushik and James, \{B. M.\} and Hegde, \{R. I.\}",

year = "1994",

language = "English",

pages = "101--102",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 Symposium on VLSI Technology ; Conference date: 07-06-1994 Through 09-06-1994",

}

TY - JOUR

T1 - Compact inverted-spacer TFT for high-density SRAMs

AU - Pfiester, J. R.

AU - Lin, J. H.

AU - Mocala, K.

AU - Ku, Y. C.

AU - Higman, J.

AU - McNelly, T.

AU - Blackwell, M.

AU - Kaushik, V.

AU - James, B. M.

AU - Hegde, R. I.

PY - 1994

Y1 - 1994

N2 - In this paper, a new compact inverted-spacer TFT has been developed for advanced SRAM applications. This compact load element can provide excellent device characteristics using a cavity-defined channel polysilicon layer which surrounds the gate electrode. This TFT is a suitable candidate for advanced SRAM bitcells.

AB - In this paper, a new compact inverted-spacer TFT has been developed for advanced SRAM applications. This compact load element can provide excellent device characteristics using a cavity-defined channel polysilicon layer which surrounds the gate electrode. This TFT is a suitable candidate for advanced SRAM bitcells.

UR - https://www.scopus.com/pages/publications/0028607819

M3 - Conference article

SN - 0743-1562

SP - 101

EP - 102

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

T2 - Proceedings of the 1994 Symposium on VLSI Technology

Y2 - 7 June 1994 through 9 June 1994

ER -

Compact inverted-spacer TFT for high-density SRAMs

Abstract

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