TY - GEN
T1 - Comparative Analysis of the Static Performance of Various HEXFET Layout Approaches for 1.2 kV SiC MOSFETs
AU - Lynch, Justin
AU - Deboer, Skylar
AU - Jang, Seung Yup
AU - Morgan, Adam J.
AU - Sung, Woongje
N1 - Publisher Copyright: © 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This study compares the static electrical characteristics of 1.2 kV MOSFETs with different layout approaches fabricated on a 6-inch 4H-SiC wafer. Three distinct layout designs-conventional (linear), hexagonal (HEXFET), and elongated HEXFET-were implemented and analyzed, achieving impressive static performance with specific on-resistance (Ron,sp) < 3 mω∗cm2 measured on-wafer. Additionally, a novel layout design for SiC power MOSFETs is presented, which removes the P+ body implant from the traditional HEXFET unit cell. The fabricated devices' measured output, transfer, and blocking performance are compared in this paper, with the proposed and elongated HEXFET demonstrating the potential to reduce the HEXFET's cell pitch and improve 1.2 kV SiC MOSFET electrical performance. fabricated diodes.
AB - This study compares the static electrical characteristics of 1.2 kV MOSFETs with different layout approaches fabricated on a 6-inch 4H-SiC wafer. Three distinct layout designs-conventional (linear), hexagonal (HEXFET), and elongated HEXFET-were implemented and analyzed, achieving impressive static performance with specific on-resistance (Ron,sp) < 3 mω∗cm2 measured on-wafer. Additionally, a novel layout design for SiC power MOSFETs is presented, which removes the P+ body implant from the traditional HEXFET unit cell. The fabricated devices' measured output, transfer, and blocking performance are compared in this paper, with the proposed and elongated HEXFET demonstrating the potential to reduce the HEXFET's cell pitch and improve 1.2 kV SiC MOSFET electrical performance. fabricated diodes.
KW - 1.2 kV MOSFET
KW - 4H-SiC
KW - HEXFET
KW - SiC MOSFET
KW - hexagonal
KW - linear
KW - static electrical performance
UR - https://www.scopus.com/pages/publications/85215102204
U2 - 10.1109/WiPDA62103.2024.10773249
DO - 10.1109/WiPDA62103.2024.10773249
M3 - Conference contribution
T3 - 2024 IEEE 11th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2024
BT - 2024 IEEE 11th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2024
Y2 - 4 November 2024 through 6 November 2024
ER -