Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

V. Jousseaume; A. Fantini; J. F. Nodin; C. Guedj; A. Persico; J. Buckley; S. Tirano; P. Lorenzi; R. Vignon; H. Feldis; S. Minoret; H. Grampeix; A. Roule; S. Favier; E. Martinez; P. Calka; N. Rochat; G. Auvert; J. P. Barnes; P. Gonon; C. Vallée; L. Perniola; B. De Salvo

doi:10.1016/j.sse.2010.11.023

Comparative study of non-polar switching behaviors of NiO- and HfO ₂-based oxide resistive-RAMs

V. Jousseaume
, A. Fantini
, J. F. Nodin
, C. Guedj
, A. Persico
, J. Buckley
, S. Tirano
, P. Lorenzi
, R. Vignon
, H. Feldis
, S. Minoret
, H. Grampeix
, A. Roule
, S. Favier
, E. Martinez
, P. Calka
, N. Rochat
, G. Auvert
, J. P. Barnes
, P. Gonon

C. Vallée, L. Perniola, B. De Salvo

Nanoscale Science and Engineering

University at Albany

Commissariat à l’énergie atomique et aux énergies alternatives
Université de Provence
CNRS

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO₂ active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO₂ and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO₂ and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO₂ devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State, while High Resistance State increases over time under 85 °C baking.

Original language	English
Pages (from-to)	62-67
Number of pages	6
Journal	Solid-State Electronics
Volume	58
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.11.023
State	Published - Apr 2011

Keywords

Forming
MIM
Memory
Ox-RRAM

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10.1016/j.sse.2010.11.023

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Jousseaume, V., Fantini, A., Nodin, J. F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J. P., ... De Salvo, B. (2011). Comparative study of non-polar switching behaviors of NiO- and HfO ₂-based oxide resistive-RAMs. Solid-State Electronics, 58(1), 62-67. https://doi.org/10.1016/j.sse.2010.11.023

@article{38dc0bfb6966423197142dce617c4bf7,

title = "Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs",

abstract = "This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO2 and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO2 devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State, while High Resistance State increases over time under 85 °C baking.",

keywords = "Forming, MIM, Memory, Ox-RRAM",

author = "V. Jousseaume and A. Fantini and Nodin, \{J. F.\} and C. Guedj and A. Persico and J. Buckley and S. Tirano and P. Lorenzi and R. Vignon and H. Feldis and S. Minoret and H. Grampeix and A. Roule and S. Favier and E. Martinez and P. Calka and N. Rochat and G. Auvert and Barnes, \{J. P.\} and P. Gonon and C. Vall{\'e}e and L. Perniola and \{De Salvo\}, B.",

year = "2011",

month = apr,

doi = "10.1016/j.sse.2010.11.023",

language = "English",

volume = "58",

pages = "62--67",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

number = "1",

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Jousseaume, V, Fantini, A, Nodin, JF, Guedj, C, Persico, A, Buckley, J, Tirano, S, Lorenzi, P, Vignon, R, Feldis, H, Minoret, S, Grampeix, H, Roule, A, Favier, S, Martinez, E, Calka, P, Rochat, N, Auvert, G, Barnes, JP, Gonon, P, Vallée, C, Perniola, L & De Salvo, B 2011, 'Comparative study of non-polar switching behaviors of NiO- and HfO ₂-based oxide resistive-RAMs', Solid-State Electronics, vol. 58, no. 1, pp. 62-67. https://doi.org/10.1016/j.sse.2010.11.023

TY - JOUR

T1 - Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs

AU - Jousseaume, V.

AU - Fantini, A.

AU - Nodin, J. F.

AU - Guedj, C.

AU - Persico, A.

AU - Buckley, J.

AU - Tirano, S.

AU - Lorenzi, P.

AU - Vignon, R.

AU - Feldis, H.

AU - Minoret, S.

AU - Grampeix, H.

AU - Roule, A.

AU - Favier, S.

AU - Martinez, E.

AU - Calka, P.

AU - Rochat, N.

AU - Auvert, G.

AU - Barnes, J. P.

AU - Gonon, P.

AU - Vallée, C.

AU - Perniola, L.

AU - De Salvo, B.

PY - 2011/4

Y1 - 2011/4

N2 - This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO2 and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO2 devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State, while High Resistance State increases over time under 85 °C baking.

AB - This paper presents a detailed comparative study of the switching characteristics of resistive memory devices, with NiO or HfO2 active materials and Pt electrodes, based on identical integration schemes. Material screening and qualification are performed using structural and composition analyses. Preliminary electrical investigations outline the non-polar switching behavior of both HfO2 and NiO devices. Then, by using a specific test setup, we present a systematic comparative study of HfO2 and NiO devices, clearly showing the tunability of the electrical characteristics with material type and process. HfO2 devices lead to largest High Resistance State/Low Resistance State ratios and higher forming voltages compared to NiO cells, while reset voltages are similar. Data retention of both materials show highly stable Low Resistance State, while High Resistance State increases over time under 85 °C baking.

KW - Forming

KW - MIM

KW - Memory

KW - Ox-RRAM

UR - https://www.scopus.com/pages/publications/79952280756

U2 - 10.1016/j.sse.2010.11.023

DO - 10.1016/j.sse.2010.11.023

M3 - Article

SN - 0038-1101

VL - 58

SP - 62

EP - 67

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

Comparative study of non-polar switching behaviors of NiO- and HfO ₂-based oxide resistive-RAMs

Abstract

Keywords

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