Abstract
The oxidation behavior of NiAl(100) by molecular oxygen and water vapor under a near-ambient pressure of 0.2 Torr is monitored using ambient-pressure X-ray photoelectron spectroscopy. O2 exposure leads to the selective oxidation of Al at temperatures ranging from 40 to 500 °C. By contrast, H2O exposure results in the selective oxidation of Al at 40 and 200 °C, and increasing the oxidation temperature above 300 °C leads to simultaneous formation of both Al and Ni oxides. These results demonstrate that the O2 oxidation forms a nearly stoichiometric Al2O3 structure that provides improved protection to the metallic substrate by barring the outward diffusion of metals. By contrast, the H2O oxidation results in the formation of a defective oxide layer that allows outward diffusion of Ni at elevated temperatures for simultaneous NiO formation.
| Original language | English |
|---|---|
| Pages (from-to) | 11414-11421 |
| Number of pages | 8 |
| Journal | Langmuir |
| Volume | 32 |
| Issue number | 44 |
| DOIs | |
| State | Published - Nov 8 2016 |
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